DATA SHEET
DARLINGTON POWER TRANSISTOR
2SC4351
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
The 2SC4351 is a high-speed Darlington power transistor. This
transistor is ideal for high-precision control such as PWM control for
pulse motors or blushless motor of OA and FA equipment.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• On-chip C to B constant voltage diode for surge voltage
absorption
• On-chip C to E reverse diode
• Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(Tc = 25°C)
P
T
(Ta = 25°C)
T
j
T
stg
Ratings
60
±
10
60
±
10
8.0
±5.0
±10
0.5
20
2.0
150
−55
to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
Electrode Connection
1. Base
2. Collector
3. Emitter
* PW
≤
10 ms, duty cycle
≤
50%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15594EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SC4351
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
Symbol
I
CBO
h
FE1
*
h
FE2
*
V
CE(sat)
*
V
BE(sat)
*
t
on
t
stg
t
f
Conditions
V
CB
= 40 V, I
E
= 0
V
CE
= 2.0 V, I
C
= 2.0 A
V
CE
= 2.0 V, I
C
= 4.0 A
I
C
= 2.0 A, I
B
= 2.0 mA
I
C
= 2.0 A, I
B
= 2.0 mA
I
C
= 2.0 A, I
B1
=
−I
B2
= 2.0 mA,
R
L
= 25
Ω,
V
CC
≅
50 V
Refer to the test circuit.
0.7
2.5
0.6
2,000
500
1.5
2.0
V
V
MIN.
TYP.
MAX.
0.5
20,000
Unit
µ
A
µ
s
µ
s
µ
s
* Pulse test PW
≤
350
µ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
h
FE1
M
2,000 to 5,000
L
4,000 to 10,000
K
8,000 to 20,000
2
Data Sheet D15594EJ2V0DS
2SC4351
TYPICAL CHARACTERISTICS (Ta = 25°C)
°
Total Power Dissipation P
T
(W)
Case Temperature T
C
(
°
C)
I
C
Derating dT (%)
Case Temperature T
C
(
°
C)
Collector to Emitter Voltage V
CE
(V)
Transient Thermal Resistance R
th(j-c)
(
°
C/W)
Collector Current I
C
(A)
Pulse Width PW (ms)
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Base to Emitter Voltage V
BE
(V)
Data Sheet D15594EJ2V0DS
3
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