MT28F004B5VG-8 T datasheet, PDF

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MT28F004B5VG-8 T: DescriptionIC flash 4mbit 80ns 40tsop; Categorystorage; File Size312KB，32 Pages; ManufacturerMicron; Websitehttp://www.micron.com/

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MT28F004B5VG-8 T Overview

IC flash 4mbit 80ns 40tsop

MT28F004B5VG-8 T Parametric

Parameter Name	Attribute value
Datasheets
MT28F004B5, 400B5
Product Photos
40 TSOP Package
Standard Package	1,000
Category	Integrated Circuits (ICs)
Family	Memory
Packaging	Tray
Format - Memory	FLASH
Memory Type	FLASH - NOR
Memory Size	4M (512K x 8)
Speed	80ns
Interface	Parallel
Voltage - Supply	4.5 V ~ 5.5 V
Operating Temperature	0°C ~ 70°C
Package / Case	40-TFSOP (0.724", 18.40mm Width)
Supplier Device Package	40-TSOP I

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4Mb

SMART 5 BOOT BLOCK FLASH MEMORY

FLASH MEMORY

FEATURES

• Seven erase blocks:

16KB/8K-word boot block (protected)

Two 8KB/4K-word parameter blocks

Four main memory blocks

• Smart 5 technology (B5):

5V ±10% V

application/production

programming

• Advanced 0.18µm CMOS floating-gate process

• Compatible with 0.3µm Smart 5 device

• Address access time: 80ns

• 100,000 ERASE cycles

• Industry-standard pinouts

• Inputs and outputs are fully TTL-compatible

• Automated write and erase algorithm

• Two-cycle WRITE/ERASE sequence

• Byte- or word-wide READ and WRITE

(MT28F400B5, 256K x 16/512K x 8)

• Byte-wide READ and WRITE only

(MT28F004B5, 512K x 8)

•

TSOP and SOP packaging options

MT28F004B5

MT28F400B5

5V Only, Dual Supply (Smart 5)

0.18µm Process Technology

40-Pin TSOP Type I

48-Pin TSOP Type I

44-Pin SOP

GENERAL DESCRIPTION

The MT28F004B5 (x8) and MT28F400B5 (x16, x8)

are nonvolatile, electrically block-erasable (Flash),

programmable, read-only memories containing

4,194,304 bits organized as 262,144 words (16 bits) or

524,288 bytes (8 bits). Writing or erasing the device is

done with a 5V V

voltage, while all operations are

performed with a 5V V

. Due to process technology

advances, 5V V

is optimal for application and pro-

duction programming. These devices are fabricated

with Micron’s advanced 0.18µm CMOS floating-gate

process.

The MT28F004B5 and MT28F400B5 are organized

into seven separately erasable blocks. To ensure that

critical firmware is protected from accidental erasure

or overwrite, the devices feature a hardware-protected

boot block. Writing or erasing the boot block requires

either applying a super-voltage to the RP# pin or driv-

ing WP# HIGH in addition to executing the normal

write or erase sequences. This block may be used to

store code implemented in low-level system recovery.

The remaining blocks vary in density and are written

and erased with no additional security measures.

Please refer to Micron’s Web site (www.micron.com/

flash)

for the latest data sheet.

OPTIONS

• Timing

80ns access

• Configurations

512K x 8

256K x 16/512K x 8

• Boot Block Starting Word Address

Top (3FFFFh)

Bottom (00000h)

• Operating Temperature Range

Extended (-40ºC to +85ºC)

• Packages

MT28F004B5

Plastic 40-pin (standard) TSOP Type I

Plastic 40-pin (lead free) TSOP Type I

MT28F400B5

Plastic 48-pin (standard) TSOP Type I

Plastic 48-pin (lead free) TSOP Type I

Plastic 44-pin (standard) SOP

Plastic 44-pin (lead free) SOP

Notes:

MARKING

-8

MT28F004B5

MT28F400B5

This generation of devices does not support 12V V

compatibility production programming; however, 5V

application production programming can be used

with no loss of performance.

Contact factory for availability.

Part Number Example:

MT28F400B5WG-8 T

09005aef8075d1f1

MT28F004B5.fm - Rev. 4, Pub. 2/2004

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

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