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M58LT256KST7ZA6F TR

Description
IC flash 256mbit 70ns 64tbga
Categorystorage   
File Size2MB,108 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Environmental Compliance  
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M58LT256KST7ZA6F TR Overview

IC flash 256mbit 70ns 64tbga

M58LT256KST7ZA6F TR Parametric

Parameter NameAttribute value
Datasheets
M58LT256KST/KSB
PCN Obsolescence/ EOL
Parallel NOR Flash MPN Terminations 04/Oct/2013
Standard Package2,500
CategoryIntegrated Circuits (ICs)
FamilyMemory
PackagingTape & Reel (TR)
Format - MemoryFLASH
Memory TypeFLASH
Memory Size256M (16M x 16)
Speed70ns
InterfaceParallel
Voltage - Supply1.7 V ~ 2 V
Operating Temperature-40°C ~ 85°C
Package / Case64-TBGA
Supplier Device Package64-TBGA (10x13)
M58LT256KST
M58LT256KSB
256 Mbit (16 Mb × 16, multiple bank, multilevel, burst)
1.8 V supply, secure Flash memories
Features
Supply voltage
– V
DD
= 1.7 V to 2.0 V for program, erase
and read
– V
DDQ
= 2.7 V to 3.6 V for I/O buffers
– V
PP
= 9 V for fast program
Synchronous/asynchronous read
– Synchronous burst read mode: 52 MHz
– Random access: 85ns, 70ns
– Asynchronous page read mode
Synchronous burst read suspend
Programming time
– 5 µs typical word program time using Buffer
Enhanced Factory Program command
Memory organization
– Multiple bank memory array: 16 Mbit banks
– Parameter blocks (top or bottom location)
Dual operations
– Program/erase in one bank while read in
others
– No delay between read and write
operations
Block protection
– All blocks protected at power-up
– Any combination of blocks can be
protected with zero latency
– Absolute write protection with V
PP
= V
SS
Security
– Software security features
– 64 bit unique device number
– 2112 bit user programmable OTP Cells
CFI (common Flash interface)
100 000 program/erase cycles per block
BGA
TBGA64 (ZA)
10 x 13 mm
Electronic signature
– Manufacturer code: 20h
– Top device codes:
M58LT256KST: 885Eh
– Bottom device codes
M58LT256KSB: 885Fh
TBGA64 package
– RoHS compliant
July 2010
Rev 2
1/108
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