BSO615NNT datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> BSO615NNT

Preview

BSO615NNT: DescriptionPower Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8; CategoryDiscrete semiconductor The transistor; File Size523KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

Download Datasheet Parametric Compare View All

BSO615NNT Overview

Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

BSO615NNT Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	60 mJ
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	2.6 A
Maximum drain-source on-resistance	0.15 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
JESD-609 code	e3
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	10.4 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON
Base Number Matches	1

Preview

Download Datasheet

View All

G

° Pb-free lead plating; RoHS compliant

Marking

615N

Rev. 1.1

Page 1

2007-02-21

BSO615NNT Related Products

	BSO615NNT	BSO615NG	BSO615NGXUMA1
Description	Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8	Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8	Power Field-Effect Transistor,
Is it Rohs certified?	conform to	conform to	conform to
Maker	Infineon	Infineon	Infineon
package instruction	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	,
Reach Compliance Code	compliant	compliant	compliant
Peak Reflow Temperature (Celsius)	260	260	NOT SPECIFIED
Maximum time at peak reflow temperature	40	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	1	1
Is it lead-free?	Lead free	Lead free	-
Parts packaging code	SOT	SOT	-
Contacts	8	8	-
ECCN code	EAR99	EAR99	-
Other features	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	-
Avalanche Energy Efficiency Rating (Eas)	60 mJ	60 mJ	-
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	-
Minimum drain-source breakdown voltage	60 V	60 V	-
Maximum drain current (ID)	2.6 A	2.6 A	-
Maximum drain-source on-resistance	0.15 Ω	0.15 Ω	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JESD-30 code	R-PDSO-G8	R-PDSO-G8	-
JESD-609 code	e3	e3	-
Number of components	2	2	-
Number of terminals	8	8	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Maximum operating temperature	150 °C	150 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE	SMALL OUTLINE	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	-
Maximum pulsed drain current (IDM)	10.4 A	10.4 A	-
Certification status	Not Qualified	Not Qualified	-
surface mount	YES	YES	-
Terminal surface	MATTE TIN	Matte Tin (Sn)	-
Terminal form	GULL WING	GULL WING	-
Terminal location	DUAL	DUAL	-
Transistor component materials	SILICON	SILICON	-
Humidity sensitivity level	-	3	3

Recommended Resources

Magnetic remote control switch circuit diagram a

Cicada chirping simulator circuit

Thermostat thermostat circuit

Programmable bandpass filter using dual T-bridge

555 simple phase printing timing circuit

Single-channel infrared receiver circuit with high interference immunity

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

Popular Components