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M29W400DT55ZE6E

Description
IC flash 4mbit 55ns 48tfbga
Categorystorage   
File Size1012KB,48 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Environmental Compliance  
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M29W400DT55ZE6E Overview

IC flash 4mbit 55ns 48tfbga

M29W400DT55ZE6E Parametric

Parameter NameAttribute value
Datasheets
M29W400DB/DT
Product Photos
48-TFBGA
PCN Obsolescence/ EOL
Parallel NOR Flash MPN Terminations 04/Oct/2013
Standard Package187
CategoryIntegrated Circuits (ICs)
FamilyMemory
PackagingTray
Format - MemoryFLASH
Memory TypeFLASH - NOR
Memory Size4M (512K x 8, 256K x 16)
Speed55ns
InterfaceParallel
Voltage - Supply2.7 V ~ 3.6 V
Operating Temperature-40°C ~ 85°C
Package / Case48-TFBGA
Supplier Device Package48-TFBGA (6x9)
M29W400DT
M29W400DB
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block)
3 V supply Flash memory
Features
Supply voltage
– V
CC
= 2.7 V to 3.6 V for Program, Erase
and Read
Access time: 45, 55, 70 ns
Programming time
– 10
μs
per byte/word typical
11 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter and 8 main blocks
Program/Erase controller
– Embedded byte/word program algorithms
Erase Suspend and Resume modes
– Read and Program another block during
Erase Suspend
Unlock bypass program command
– Faster production/batch programming
Temporary block unprotection mode
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
Electronic signature
– Manufacturer code: 0020h
– Top device code M29W400DT: 00EEh
– Bottom device code M29W400DB: 00EFh
– RoHS packages
Automotive Device Grade 3
– Temperature: –40 to 125 °C
– Automotive grade certified
FBGA
SO44 (M)
(1)
TSOP48 (N)
12 x 20 mm
FBGA
TFBGA48 (ZA)
(1)
6 x 9 mm
TFBGA48 (ZE)
6 x 8 mm
1. These packages are no more in mass production.
April 2009
Rev 8
1/48
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