P410m 2.5-Inch SAS NAND Flash SSD
Features
P410m 2.5-Inch SAS NAND Flash SSD
MTFDEAK100MAS-1S1AA, MTFDEAK200MAS-1S1AA,
MTFDEAK400MAS-1S1AA
Features
•
•
•
•
Micron
®
25nm MLC NAND Flash
RoHS-compliant package
SAS 6 Gb/s interface
Supported SAS speeds
– 3 Gb/s
– 6 Gb/s
– Auto-speed negotiation
Enterprise sector size support
– 512-byte
Hot-plug capable
SAS-2, rev 16 support
SAM-3-compliant
128-entry command queue depth
Security erase command set: fast and secure erase
100GB performance (steady state)
1
– Sequential read (64KB transfer): 400 MB/s
– Sequential write (64KB transfer): 220 MB/s
– Random read (4KB transfer): 50,000 IOPS
– Random write (4KB transfer): 25,000 IOPS
– READ latency (4KB transfer): 0.7ms
– WRITE latency (4KB transfer): 1.5ms
200GB performance (steady state)
1
– Sequential read (64KB transfer): 400 MB/s
– Sequential write (64KB transfer): 340 MB/s
– Random read (4KB transfer): 50,000 IOPS
– Random write (4KB transfer): 30,000 IOPS
– READ latency (4KB transfer): 0.7ms
– WRITE latency (4KB transfer): 1.5ms
400GB performance (steady state)
1
– Sequential read (64KB transfer): 400 MB/s
– Sequential write (64KB transfer): 340 MB/s
– Random read (4KB transfer): 50,000 IOPS
– Random write (4KB transfer): 30,000 IOPS
– READ latency (4KB transfer): 0.7ms
– WRITE latency (4KB transfer): 1.5ms
• Reliability
– MTTF: 2 million device hours
2
– Static and dynamic wear leveling
– Uncorrectable bit error rate (UBER): <1 sector
per 10
16
bits read
• Capacity
3
(unformatted): 100GB, 200GB, 400GB
• Endurance: Total bytes written (TBW)
– 100GB: 1.75PB
– 200GB: 3.50PB
– 400GB: 7.00PB
• Mechanical – 7.0mm height
– Supply voltage: 12V ±10%
– 2.5-inch drive: 100.5mm x 69.85mm x 7.0mm
• Field-upgradeable firmware
• Power consumption: <9W (TYP)
• Operating temperature
– Commercial (0°C to +70°C)
4
Notes:
1. Typical I/O performance numbers as meas-
ured using Iometer with a queue depth of
32 and write cache disabled.
2. The product achieves a mean time to failure
(MTTF) based on population statistics not
relevant to individual units.
3. 1GB = 1 billion bytes; formatted capacity is
less.
4. Drive case temperature.
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•
•
•
•
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•
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Warranty:
Contact your Micron sales representative
for further information regarding the product,
including product warranties.
•
PDF: 09005aef84be6ef8
p410m_2_5_channel.pdf - Rev. H 03/14 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2012 Micron Technology, Inc. All rights reserved.
P410m 2.5-Inch SAS NAND Flash SSD
Features
Part Numbering Information
Micron’s P410m SSD is available in different configurations and densities. Visit
www.micron.com
for a list of valid
part numbers.
Figure 1: Part Number Chart
MT FD
Micron Technology
Product Family
FD = Flash drive
E
AK 100 M AS - 1
S
1
AA
ES
Production Status
Blank = Production
ES = Engineering sample
Operating Temperature Range
Blank = Commercial (0°C to 70°C)
Drive Interface
E = SAS 6.0 Gb/s
Drive Form Factor
Drive Density
100 = 100GB
200 = 200GB
400 = 400GB
AK = 2.5-inch (7.0mm)
Blank = Null
AA = Contact factory
AB = Contact factory
AC = Contact factory
Hardware Feature Set
BOM Revision
1 = 1st generation
NAND Flash Type
M = MLC
NAND Flash Component
Sector Size
S = 42Gb, MLC, x8 3.3V (25nm)
Product Family
AS = P410m
1 = 512-byte
PDF: 09005aef84be6ef8
p410m_2_5_channel.pdf - Rev. H 03/14 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2012 Micron Technology, Inc. All rights reserved.
P410m 2.5-Inch SAS NAND Flash SSD
General Description
General Description
Micron’s P410m solid state drive (SSD) uses a single-chip controller with a dual-port
SAS interface on the system side and n-channels of Micron NAND Flash internally.
Packaged in an HDD replacement enclosure, the SSD integrates easily in existing stor-
age infrastructures.
The P410m is designed to support and manage the needs of highly available, high-per-
formance platforms that utilize significant read/write mixed workloads. Optimized to
support enterprise needs previously supported solely by single-level cell (SLC) solu-
tions, the P410m provides the endurance and data integrity required by these growing
environments.
Figure 2: Functional Block Diagram
NAND
SAS (0)
SSD
controller
NAND
NAND
SAS (1)
NAND
DRAM
buffer
PDF: 09005aef84be6ef8
p410m_2_5_channel.pdf - Rev. H 03/14 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2012 Micron Technology, Inc. All rights reserved.
P410m 2.5-Inch SAS NAND Flash SSD
Logical Block Address Configuration
Logical Block Address Configuration
The drive is set to report the number of logical block addresses (LBA) that will ensure
sufficient storage space for the specified density. Standard LBA settings, based on the
IDEMA standard (LBA1-02), are shown below.
Table 1: Standard LBA Settings – 512-Byte Sector Size
Total LBA
Drive Size
100GB
200GB
400GB
Decimal
195,371,568
390,721,968
781,422,768
Hexadecimal
BA52230
1749F1B0
2E9390B0
Decimal
195,371,567
390,721,967
781,422,767
Max LBA
Hexadecimal
BA5222F
1749F1AF
2E9390AF
User Available
Bytes
(Unformatted)
100,030,242,816
200,049,647,616
400,088,457,216
Physical Configuration
Table 2: 2.5-Inch Dimensions
Value
Specification
Height
Width
Length
Nom
–
69.85
100.50
Max
7.0
–
–
Unit
mm
mm
mm
PDF: 09005aef84be6ef8
p410m_2_5_channel.pdf - Rev. H 03/14 EN
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2012 Micron Technology, Inc. All rights reserved.
P410m 2.5-Inch SAS NAND Flash SSD
Interface Connectors
Interface Connectors
The SAS signal segment interface cable has four conductors and three ground connec-
tions. As shown in Package Dimensions, the cable includes a 7-pin signal segment and a
15-pin power segment arranged in a single row with a 1.27mm (0.050in) pitch.
Table 3: SAS Signal Segment Pin Assignments
Signal Name
S1
S2
S3
S4
S5
S6
S7
Type
GND
TX0+
TX0-
GND
RX0-
RX0+
GND
Description
Second mate ground
Positive (Tx0 to target)
Negative Tx0 to target)
Second mate to ground
Negative (Rx0 to target)
Positive (Rx0 to target)
Second mate ground
Table 4: Back Side Signal Segment
Signal Name
S8
S9
S10
S11
S12
S13
S14
Type
GND
TX1+
TX1-
GND
RX1-
RX1+
GND
Description
Second mate ground
Positive (Tx1 to target)
Negative Tx1 to target)
Second mate to ground
Negative (Rx1 to target)
Negative (Rx1 to target)
Second mate ground
Table 5: 2.5-Inch SAS Power Segment Pin Assignments
Pin#
P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
Signal Name
V33
V33
V33
GND
GND
GND
V5
V5
V5
GND
DAS
GND
Description
No connect
No connect
No connect
Ground
Ground
No connect
No connect
No connect
No connect
Ground
READY LED
Ground
PDF: 09005aef84be6ef8
p410m_2_5_channel.pdf - Rev. H 03/14 EN
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2012 Micron Technology, Inc. All rights reserved.
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