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EGP30A

Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size78KB,2 Pages
ManufacturerGeneral Instrument
Download Datasheet Parametric View All

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EGP30A Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon,

EGP30A Parametric

Parameter NameAttribute value
Objectid1438681650
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresPATENTED DEVICE
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current125 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
Maximum reverse current5 µA
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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