IM801C-21EFH-66.0000MHZ datasheet, PDF

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IM801C-21EFH-66.0000MHZ: Description66MHz Nom,; CategoryPassive components oscillator; File Size617KB，9 Pages; ManufacturerILSI; Websitehttp://www.ilsiamerica.com; Environmental Compliance

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IM801C-21EFH-66.0000MHZ Overview

66MHz Nom,

IM801C-21EFH-66.0000MHZ Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	145146713696
package instruction	DILCC4,.1,86
Reach Compliance Code	compliant
Other features	TRI-STATE; ENABLE/DISABLE FUNCTION
maximum descent time	2 ns
Frequency Adjustment - Mechanical	NO
frequency stability	20%
JESD-609 code	e4
Installation features	SURFACE MOUNT
Number of terminals	4
Nominal operating frequency	66 MHz
Maximum operating temperature	70 °C
Minimum operating temperature
Oscillator type	LVCMOS/HCMOS
Output load	15 pF
Encapsulate equivalent code	DILCC4,.1,86
physical size	3.2mm x 2.5mm x 0.8mm
longest rise time	2 ns
Maximum slew rate	4.5 mA
Maximum supply voltage	3.08 V
Minimum supply voltage	2.52 V
Nominal supply voltage	2.8 V
surface mount	YES
maximum symmetry	45/55 %
Terminal surface	Nickel/Palladium/Gold (Ni/Pd/Au)

IM801C-21EFH-66.0000MHZ Preview

MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz

Features:



MEMS Technology

Direct pin to pin drop-in replacement for industry-standard packages

LVCMOS/HCMOS Compatible Output

Industry-standard package 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2 mm x mm

Pb-free, Halogen-free, Antimony-free

RoHS and REACH compliant

Fast delivery times

IM801 Series

Typical Applications:



Fibre Channel

Server and Storage

GPON, EPON

100M / 1G /10G Ethernet

Electrical Specifications:

Frequency Range

Frequency Stability

Operating Temperature

Supply Voltage (Vdd) 10%

Current Consumption

OE Disable Current

Standby Current

Waveform Output

Symmetry

Rise / Fall Time

Logic “1”

Logic “0”

Input High Voltage

Input Low Voltage

Input Pull-up Impedance

Startup Time

Enable/Disable time

Resume Time

RMS Period Jitter

Peak-to-peak Period Jitter

RMS Phase Jitter (random)

1.000 MHz to 110.000MHz

See Part Number Guide

3.8 mA typ./ 4.5 mA max

3.7 mA typ./ 4.2 mA max

3.5 mA typ./ 4.1 mA max

4.2 mA max

4.0 mA max

2.1 µA typ./ 4.3 µA max

1.1 µA typ. / 2.5 µA max

0.2 µA typ. / 1.3 µA max

LVCMOS / HCMOS

45%/55%

1.0 nSec typ./ 2.0 nSec max

1.3 nSec typ./ 2.5 nSec max

90% of Vdd min

10% of Vdd max

70% of Vdd min

30% of Vdd max

50kΩ min / 87kΩ typ. 150kΩ max

2.0MΩ min

5.0 mSec max

130 nSec max

5.0 mSec max

1.8pSec typ./ 3.0pSec max

1.8pSec typ./ 3.0pSec max.

12.0 pSec typ./ 25.0 pSec max

14.0 pSec typ./ 30.0 pSec max

0.5pSec typ./ 0.9 pSec max

1.3pSec typ./ 2.0pSec max

Inclusive of Initial Tolerance, Operating Temperature Range, Load,

Voltage, and Aging

No load condition, F = 20 MHz, Vdd = +2.8 V to +3.3 V

No load condition, F = 20 MHz, Vdd = +2.5 V

No load condition, F = 20 MHz, Vdd = +1.8 V

Vdd = +2.5 V to +3.3 V, OE = GND, Output in high-Z state

Vdd = +1.8 V, OE = GND, Output in high-Z state

= GND, Vdd = +2.8 V to +3.3V

= GND, Vdd = +2.5 V

= GND, Vdd = +1.8 V

50% of waveform all Vdds

Vdd = +2.5 V, +2.8 V, + 3.0 V or +3.3 V from 20% to 80% of waveform

Vdd = +1.8 V from 20% to 80% of waveform

Pin 1, OE or

Pin 1, OE logic high or logic low or

logic high

Pin 1,

logic Low

Measured from the time Vdd reaches its rated min value

F = 110 Mhz. For other frequencies, T_oe =100 nSec = 3 cycles

Measured from the time

pin crosses 50% threshold

F = 75 MHz, Vdd = +2.5 V, +2.8 V, + 3.0 V or +3.3 V

F = 75 MHz, Vdd = +1.8 V

F = 75 MHz, Vdd = +2.5 V, +2.8 V, + 3.0 V or +3.3 V

F = 75 MHz, Vdd = +1.8 V

F = 75 MHz, Integration Bandwidth = 900 kHz to 7.5 MHz

F = 75 MHz, Integration Bandwidth = 12 kHz to 20.0 MHz

Notes:



All min and max limits are specified over temperature and rated operating voltage with 15pF output unless otherwise stated.



Typical values are at +25ºC and nominal supply voltage.

Absolute Maximum Limits

Storage Temperature

Supply Voltage (Vdd)

Electrostatic Discharge

Solder Temperature (follow standard Pb free soldering guidelines)

Junction Temperature

-65ºC to +150ºC

-0.5 VDC to 4.0 VDC

2000 V max

260ºC max

150ºC max

ILSI America Phone 775-851-8880

●

Fax 775-851-8882

●email:

e-mail@ilsiamerica.com

●

www.ilsiamerica.com

Specifications subject to change without notice

Rev: 01/30/16_A

Page 1 of 9

MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz

Ordering Information:

Part Number Guide

Packages

IM801B – 5.0 x 3.2

IM801C – 3.2 x 2.5

IM801D – 2.5 x 2.0

IM801E – 2.0 x 1.6

Input Voltage

1 = +1.8 V

6 = +2.5 V

2 = +2.8 V

7 = +3.0 V

3 = +3.3 V

Operating Temperature

1 = 0ºC to +70ºC

2 = -40ºC to +85ºC

3 = -20ºC to +70ºC

Output Drive

Strength

- = Default

(see tables 2

through 6)

Stability

(ppm)

F = ±20

A = ±25

B = ±50

Select Function

H = Tri-State

S = Standby

O = N/C

IM801 Series

Frequency

Sample Part Number:

IM801C-62-FS-20.0000MHz

This 20.0000 MHz oscillator in a 3.2 x 2.5 package with stability ±20 ppm from -40ºC to +85ºC using a supply voltage of +2.5 V. The Output Drive

Strength (Rise and Fall Time) is the default value 1.0 nSec per Table 3 with 15 pF load. With Pin 1 function as Standby

Sample Part Number:

IM801D-71RAO-66.0000MHz

This 66.0000 MHz oscillator in a 2.5 x 2.0 package with stability ±25 ppm from 0ºC to +70ºC using a supply voltage of +3.0 V. The Output Drive

Strength (Rise and Fall Time) is the R drive strength is 4.54 nSec per Table 5 with 30 pF load. With Pin 1 function is not connected

Notes:



Not all options are available at all frequencies and temperatures ranges.



Please consult with sales department for any other parameters or options.



Oscillator specification subject to change without notice.

Test Circuit

Waveform

ILSI America Phone 775-851-8880

●

Fax 775-851-8882

●email:

e-mail@ilsiamerica.com

●

www.ilsiamerica.com

Specifications subject to change without notice

Rev: 01/30/16_A

Page 2 of 9

MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz

Performance Plots:

IM801 Series

Figure 1: Idd vs Frequency

Figure 2: Frequency vs Temperature

Figure 3: RMS Period Jitter vs Frequency

Figure 4: Duty Cycle vs Frequency

Figure 5: 20% to 80% Rise Time vs Temperature

Figure 6: 20% to 80% Fall Time vs Temperature

ILSI America Phone 775-851-8880

●

Fax 775-851-8882

●email:

e-mail@ilsiamerica.com

●

www.ilsiamerica.com

Specifications subject to change without notice

Rev: 01/30/16_A

Page 3 of 9

MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz

Performance Plots (Cont.)

IM801 Series

Figure 7: RMS Integrated Phase Jitter Random

(12 kHz to 20 MHz) vs Frequency

Figure 8: RMS Integrated Phase Jitter Random

(900 kHz to 20 MHz) vs Frequency

Notes:



All plots are measured with 15pF load at room temperature unless otherwise stated.



Phase noise plots are measured with Agilent E5052B signal source analyzer integration range is up to 5 MHz for carrier frequencies below 40 MHz

Environmental Specifications:

Environmental Compliance

Parameter

Mechanical Shock

Mechanical Vibration

Temperature Cycle

Solderability

Moisture Sensitivity Level

Condition/Test Method

MIL-STD-883F, Method 2002

MIL-STD-883F, Method 2007

JESD22, Method A104

MIL-STD-883F, Method 2003

MSL1 at +260ºC

Pb Free Solder Reflow Profile

Ts max to T

(Ramp-up Rate)

Preheat

Temperature min (Ts min)

Temperature typ (Ts typ)

Temperature max (Ts max)

Time (Ts)

Ramp-up Tate (T

to Tp

Time Maintained Above

Temperature (T

)

Time (T

Peak Temperature (Tp)

Time within 5ºC to Peak

Temperature (Tp)

Ramp-down Rate

Tune 25ºC to Peak Temperature

Moisture Sensitivity Level (MSL)

3ºC / second max

150ºC

175ºC

200ºC

60 to180 seconds

3ºC / second max

217ºC

60 to 150 seconds

260ºC max for seconds

20 to 40 seconds

6ºC / second max

8 minute max

Level 1

Units are backward compatible with +240ºC reflow processes

ILSI America Phone 775-851-8880

●

Fax 775-851-8882

●email:

e-mail@ilsiamerica.com

●

www.ilsiamerica.com

Specifications subject to change without notice

Rev: 01/30/16_A

Page 4 of 9

MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz

Pin Functionally

Pin Description

Symbol

Tri-state

Standby

Functionality

High or Open = specified frequency output

Low = Output is high impedance, only output is disabled.

High or Open = specified frequency output.

Low = Output is low. Device goes to sleep mode. Supply current

reduces to standby current.

Any voltage between 0.0 V to Vdd or Open = specified frequency

output

Pin 1 has no functiion

Electrical ground

Oscillator output

Power supply voltage

IM801 Series

Pin Assignments

N/C

No Connect

ST 1

N/C

Top View

Vdd

GND

Power

Out

Output

Vdd

Power

Notes:

1. In OE or

mode, a pull-up resistor of 10.0 kΩ or less is recommended if Pin 1 is not externally

driven. If Pin 1 needs to be left floating, use the NC option.

2. A capacitor of value 0.1 µF or higher between Pin 4 (Vdd) and Pin 1 (GND) is required.

GND 2

OUT

Pin 1 Configuration Options (OE, or

Output Enable (OE) Mode

, or NC)

Pin 1 of the IM801 can be factory-programmed to support three modes: Output Enable (OE), Standby (

) or No Connect (NC).

In the OE mode, applying logic Low to the OE pin only disables the output driver and puts it in Hi-Z mode. The core of the device

continues to operate normally. Power consumption is reduced due to the inactivity of the output. When the OE pin is pulled High, the

output is typically enabled in <1 µSec.

Standby

Mode

In the ST mode, a device enters into the standby mode when Pin 1 pulled Low. All internal circuits of the device are turned off. The

current is reduced to a standby current, typically in the range of a few µA. When

is pulled High, the device goes through the

“resume” process, which can take up to 5 mSec.

No Connect (NC) Mode

In the NC mode, the device always operates in its normal mode and outputs the specified frequency regardless of the logic level

on Pin 1.

Table 1 below summarizes the key relevant parameters in the operation of the device in OE, ST, or NC mode.

Parameters

Active current 20.0 MHz (max +1.80 VDC)

OE disable current (max +1.80 VDC)

Standby current (typical +1.80 VDC)

OE enable time at 20.0 MHz (max)

Resume time from standby

(max, all frequency)

Output driver in OE disable/standby mode

Table 1 OE vs.

4.1 mA

4.0 mA

N/A

200 nSec

N/A

High Z

vs. NC

4.1 mA

N/A

0.6 µA

N/A

5 mSec

4.1 mA

N/A

ILSI America Phone 775-851-8880

●

Fax 775-851-8882

●email:

e-mail@ilsiamerica.com

●

www.ilsiamerica.com

Specifications subject to change without notice

Rev: 01/30/16_A

Page 5 of 9

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