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IRFPC40

Description
Power Field-Effect Transistor, 6.8A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
CategoryDiscrete semiconductor    The transistor   
File Size87KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

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IRFPC40 Overview

Power Field-Effect Transistor, 6.8A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,

IRFPC40 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)570 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)6.8 A
Maximum drain current (ID)6.8 A
Maximum drain-source on-resistance1.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-247
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)150 W
Maximum pulsed drain current (IDM)25 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
IRFPC40
Data Sheet
August 1999
File Number
2158.2
6.8A, 600V, 1.200 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits..
Features
• 6.8A, 600V
• r
DS(ON)
= 1.200
• Single Pulse Avalanche Energy Rated
• Simple Drive Requirements
• Ease of Paralleling
Symbol
D
Ordering Information
PART NUMBER
IRFPC40
PACKAGE
TO-247
BRAND
IRFPC40
G
S
NOTE: When ordering, include the entire part number.
Packaging
JEDEC TO-247
SOURCE
DRAIN
GATE
DRAIN
(TAB)
©2001 Fairchild Semiconductor Corporation
IRFPC40 Rev. A
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