CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
Measured from the Drain
Lead, 6mm (0.25in) from
Package to Center of Die
Measured from the Source
Lead, 6mm (0.25in) from
Header to Source Bonding
Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
G
L
S
S
TEST CONDITIONS
V
GS
= 0V, I
D
= 250
µ
A, (Figure 11)
V
GS
= V
DS
, I
D
= 250
µ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= 10V
V
GS
=
±
20V
V
GS
= 10V, I
D
= 3.4A (Figures 9, 10)
V
DS
≥
100V, I
DS
= 3.4A (Figure 13)
V
DD
= 300V, I
D
≈
6.2A, R
G
= 9.1
Ω,
V
GS
= 10V,
R
L
= 47
Ω
Switching Speeds are Essentially
ndependent of Operating Temperature
MIN
600
2.0
-
-
6.8
-
-
4.9
-
-
-
-
TYP
-
-
-
-
-
-
0.97
7.3
13
18
55
20
40
5.5
20
1300
160
45
5.0
MAX
-
4.0
250
1000
-
±
100
1.2
-
20
27
83
30
60
-
-
-
-
-
-
UNITS
V
V
µ
A
µ
A
A
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 4)
Gate to Source Leakage
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 4)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
V
GS
= 10V, I
D
= 6.2A, V
DS
= 0.7 x Rated BV
DSS
(Figure 14) Gate Charge is Essentially Independent of
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