TLP371,TLP372
TOSHIBA Photocoupler
GaAs Ired & Photo−Transistor
TLP371, TLP372
Office Machine
Household Use Equipment
Telecommunication
Solid State Relay
Programmable Controllers
The TOSHIBA TLP371 and TLP372 consists of a gallium arsenide
infrared emitting diode optically coupled to a darlington connected
photo−transistor which has an integrated base−emitter resistor to
optimize switching speed and elevated temperature characteristics in a
six lead plastic DIP package.
TLP372 is no−base internal connection for high−EMI environments.
•
•
•
Current transfer ratio: 1000% (min) (I
F
= 1mA)
Isolation voltage: 5000 Vrms (min)
UL recognized: UL1577, file no. E67349
TOSHIBA
11−7A8
Weight: 0.4g (typ.)
Unit in mm
Pin Configurations
(top view)
TLP371
1
2
3
1 : Anode
2 : Cathode
3 : NC
4 : Emitter
5 : Collector
6 : Base
6
5
4
1
2
3
1 : Anode
2 : Cathode
3 : NC
4 : Emitter
5 : Collector
6 : NC
TLP372
6
5
4
1
2007-10-01
TLP371,TLP372
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
Forward current derating (Ta
≥
39°C)
LED
Peak forward current (100μs pulse, 100pps)
Reverse voltage
Junction temperature
Collector−emitter voltage
Collector−base voltage (TLP371)
Emitter−collector voltage
Detector
Emitter−base voltage (TLP371)
Collector current
Power dissipation
Power dissipation derating (Ta
≥
25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Total package power dissipation
Total package power dissipation derating (Ta
≥
25°C)
Isolation voltage (AC, 1min., R.H.
≤
60%)
(Note 1)
Symbol
I
F
ΔI
F
/ °C
I
FP
V
R
T
j
V
CEO
V
CBO
V
ECO
V
EBO
I
C
P
C
ΔP
C
/ °C
T
j
T
stg
T
opr
T
sold
P
T
ΔP
T
/ °C
BV
S
Rating
60
−0.7
1
5
125
300
300
0.3
7
150
300
−3.0
125
−55~125
−55~100
260
350
−3.5
5000
Unit
mA
mA / °C
A
V
°C
V
V
V
V
mA
mW
mW / °C
°C
°C
°C
°C
mW
mW / °C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4,5 and 6 shorted
together.
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Collector current
Operating temperature
Symbol
V
CC
I
F
I
C
T
opr
Min
―
―
―
−25
Typ.
―
16
―
―
Max
200
25
120
85
Unit
V
mA
mA
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2007-10-01
TLP371,TLP372
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Reverse current
Capacitance
Collector−emitter
breakdown voltage
Emitter−collector
breakdown voltage
Collector−base
breakdown voltage (TLP371)
Emitter−base
breakdown voltage (TLP371)
Detector
Collector dark current
Symbol
V
F
I
R
C
T
V
(BR) CEO
V
(BR) ECO
V
(BR) CBO
V
(BR) EBO
Test Condition
I
F
= 10 mA
V
R
= 5 V
V = 0, f = 1 MHz
I
C
= 0.1 mA
I
E
= 0.1 mA
I
C
= 0.1 mA
I
E
= 0.1 mA
V
CE
= 200 V
I
CEO
V
CE
= 200 V
Ta = 85 °C
V
CE
= 200 V
Ta = 85 °C,
R
BE
= 10 MΩ
V
CE
= 200 V
V
CE
= 5 V,
I
C
= 10 mA
V = 0, f = 1 MHz
Min
1.0
―
―
300
0.3
300
7
―
―
Typ.
1.15
―
30
―
―
―
―
10
―
Max
1.3
10
―
―
―
―
―
200
20
Unit
V
μA
pF
V
V
V
V
nA
μA
Collector dark current (TLP371)
Collector dark current (TLP371)
DC forward current gain (TLP371)
Capacitance (collecter to emitter)
I
CER
I
CBO
h
FE
C
CE
―
―
―
―
0.5
0.1
7000
10
10
―
―
―
μA
nA
―
pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Current transfer ratio
Saturated CTR
Base photo−current (TLP371)
Collector−emitter
saturation voltage
Symbol
I
C
/ I
F
I
C
/ I
F (sat)
I
PB
V
CE (sat)
Test Condition
I
F
= 1 mA, V
CE
= 1 V
I
F
= 10 mA, V
CE
= 1 V
I
F
= 1 mA, V
CB
= 1 V
I
C
= 10 mA, I
F
= 1 mA
I
C
= 100 mA, I
F
= 10 mA
MIn
1000
500
―
―
0.3
Typ.
4000
―
6
―
―
Max
―
―
―
1.0
1.2
Unit
%
%
μA
V
3
2007-10-01
TLP371,TLP372
100
I
F
– Ta
Allowable collector power
dissipation P
C
(mW)
400
P
C
– Ta
Allowable forward current
I
F
(mA)
80
320
60
240
40
160
20
80
0
−20
0
20
40
60
80
100
120
0
−20
0
20
40
60
80
100
120
Ambient temperature Ta (℃)
Ambient temperature Ta (℃)
5000
3000
I
FP
– D
R
I
F
(mA)
Pulse width
≤
100μs
Ta = 25°C
100
50
30
I
F
– V
F
Ta = 25°C
Pulse forward current
I
FP
(mA)
1000
500
300
10
5
3
100
50
30
10
3
Forward current
1
0.5
0.3
10
−
3
3
10
−
2
3
10
−
1
3
10
0
Duty cycle ratio DR
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Forward
voltage VF (V)
−3.2
−2.8
−2.4
−2.0
−1.6
−1.2
−0.8
−0.4
0.1
Δ
V
F
/
Δ
Ta
– I
F
1000
I
FP
– V
FP
Pulse forward current I
FP
(mA)
500
300
Forward voltage temperature
coefficient
ΔV
F
/
ΔTa
(mV /
℃)
100
50
30
10
5
3
1
0.6
Pulse width
≤
10μs
Repetitive frequency
=100Hz
Ta = 25°C
0.3 0.5
1
3
10
30
50
1.0
1.4
1.8
2.2
2.6
3.0
Forward
current
I
F
(mA)
Pulse forward
voltage VFP (V)
5
2007-10-01
_pdf/pg_0001.png)
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD_pdf/1.png)
_pdf/2.png)
_pdf/3.png)
_pdf/4.png)
_pdf/5.png)
_pdf/pg_0002.png)
_pdf/pg_0003.png)
_pdf/pg_0004.png)
_pdf/pg_0005.png)
