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MA45267A-132

Description
L-S BAND, 2.52pF, 60V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DIE-1
CategoryDiscrete semiconductor    diode   
File Size150KB,5 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
Download Datasheet Parametric View All

MA45267A-132 Overview

L-S BAND, 2.52pF, 60V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DIE-1

MA45267A-132 Parametric

Parameter NameAttribute value
Objectid1407538941
Parts packaging codeDIE
package instructionX-XUUC-N
Contacts1
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage60 V
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio6.2
Nominal diode capacitance2.52 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandL BAND TO S BAND
JESD-30 codeX-XUUC-N
Number of components1
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialUNSPECIFIED
Package shapeUNSPECIFIED
Package formUNCASED CHIP
Maximum power dissipation0.2 W
Certification statusNot Qualified
minimum quality factor1700
Maximum reverse current0.02 µA
Reverse test voltage48 V
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Varactor Diode ClassificationABRUPT

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