SILICON PIN DIODES
Square ceramic surface mountable PIN diodes
MICROWAVE
SQUARE CERAMIC SURFACE MOUNTABLE PIN DIODES
Description
These PIN diodes are manufactured in a square package (SMD) for surface mount applications. These
packages utilize ceramic package technology with low inductance and axial terminations. This design
simplifies automatic pick and place indexing and assembly. The termination contacts are tin lead
plated for vapor or reflow circuit board soldering on Printed Circuit Boards.
These diodes are particularly suited for applications in frequency hopping radios, low loss,
low distortion, and filters in HF VHF and UHF frequencies.
,
Packages
Packages
DH50107
DH50205
DH50206
DH50209
DH80050
DH80051
DH80052
DH80053
DH80054
DH80055
DH80082
DH80100
DH80102
DH80106
SMD4
-06
-06
-06
-06
-06
-06
-06
-06
-06
-06
SMD4AM
SMD6
-20
-20
-20
-20
-20
-20
-20
-20
-20
-22
-20
-06
SMD8
-40
-40
-40
-40
-40
-40
-24
-24
-24
-24
-24
-24
-24
How to order
DH50103
Diode type
-
06
Package
information
-06: SMD4
-40: SMD4AM
-20: SDM6
(except for DH80055:-22)
T3
Conditioning
T1: 1000 pieces
tape & reel
T3: 3000 pieces
tape & reel
blank: bulk
-24: SMD8
1-12
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex-components.com
SILICON PIN DIODES
Square ceramic surface mountable PIN diodes
MICROWAVE
Electrical characteristics
Low voltage PIN diodes
Breakdown
Vbr
(V)
Test
conditions
Type
DH50107
DH50205
DH50206
DH50207
DH50209
Ir = 10 µA
min.
100
200
200
200
200
Total
capacitance
Ct (pF)
Vr = 6 V
f = 1 MHz
typ.
max.
0.64
0.84
0.41
0.47
0.47
0.64
0.64
0.84
1.00
1.20
Forward
series resistance
Rsf (Ω)
If = 10 mA
f = 120 MHz
max.
0.60
1.00
0.80
0.70
0.25 (1)
Minority
carrier
t l (µs)
If = 10 mA
Ir = 6 mA
min.
0.50
0.80
0.95
1.00
2.00
Max. power
dissipation
25°C
Contact
surface
W (2)
TBD
TBD
TBD
TBD
TBD
Free
air
W (3)
TBD
TBD
TBD
TBD
TBD
(1) Rsf at If = 50 mA
(2) Diode brazed on infinite copper heat sink
(3) Diode brazed on Epoxy circuit (PCB)
Medium voltage PIN diodes
Applicable Breakdown Total capacitance
Forward series
Minority
Max. power
voltage V
Vbr
Ct
resistance Rsf
carrier
dissipation
(V)
(V)
(pF)
(Ω)
τl
(µs)
25° C
I < 10 µA
Ir = 10 µA
Vr = 50 V
I= 100mA I= 200 mA If= 10mA Contact Free
f = 1MHz
f= 120MHz f= 120 MHz Ir= 6mA surface
air
max.
typ.
typ.
max.
max.
min.
W (1) W (2)
500
550
0.40
0.45
0.70
0.65
1.1
3.0
1.2
500
550
0.55
0.65
0.60
0.55
1.5
3.5
1.2
500
550
0.85
1.05
0.40
0.35
2.0
4.0
1.2
500
550
1.05
1.20
0.35
0.30
2.5
4.0
1.5
500
550
1.25
1.35
0.30
0.27
3.0
4.5
1.5
500
550
1.45
1.55
0.25
0.22
3.5
4.5
1.5
Test
conditions
Type
DH80050
DH80051
DH80052
DH80053
DH80054
DH80055
(1) Diode brazed on infinite copper heat sink
(2) Diode brazed on Epoxy circuit (PCB)
1-13
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex-components.com
SILICON PIN DIODES
Square ceramic surface mountable PIN diodes
MICROWAVE
Medium voltage PIN diodes
Applicable Breakdown Total capacitance
Forward series
voltage V
Vbr
Ct
resistance Rsf
(V)
(V)
(pF)
(Ω)
I < 10 µA
Ir = 10 µA
Vr = 50 V
I=100mA I=200 mA
f = 1MHz
f=120MHz f=120 MHz
max.
typ.
typ.
max.
max.
800
850
0.90
1.00
0.40
0.35
1000
1100
0.55
0.65
0.70
0.60
1000
1100
0.85
1.30
0.50
0.35
1000
1100
1.25
2.00
0.35
0.30
Minority
Max. power
carrier
dissipation
t
(µs)
l
25° C
If=10mA Contact Free
Ir=6mA surface
air
min.
W (1) W (2)
3.00
TBD
TBD
3.00
TBD
TBD
4.00
TBD
TBD
7.00
TBD
TBD
Test
conditions
Type
DH80082
DH80100
DH80102
DH80106
(1) Diode brazed on infinite copper heat sink
(2) Diode brazed on Epoxy circuit (PCB)
Temperature ranges
Operating junction (Tj)
Storage
:
:
-55° C to +150° C
-65° C to +150° C
Series Resistance vs. Forward Current
R
SF
(Ω)
100
10
DH80052
DH80050
1
0
0.1
10
100
I (mA)
1000
Series Resistance vs. Forward Current
R
SF
(Ω)
100
10
DH80053
DH80051
1
0
0.1
10
100
I (mA)
1000
1-14
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex-components.com
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