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PHP119NQ06T

Description
N-channel TrenchMOS standard level FET
CategoryDiscrete semiconductor    The transistor   
File Size80KB,13 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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PHP119NQ06T Overview

N-channel TrenchMOS standard level FET

PHP119NQ06T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)75 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)200 W
surface mountNO
Terminal surfaceMatte Tin (Sn)
PHP/PHB119NQ06T
N-channel TrenchMOS™ standard level FET
Rev. 01 — 05 May 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s
Standard level threshold
s
Very low on-state resistance.
1.3 Applications
s
Motors, lamps, solenoids
s
DC-to-DC converters
s
Uninterruptible power supplies
s
General industrial applications.
1.4 Quick reference data
s
V
DS
55 V
s
P
tot
200 W
s
I
D
75 A
s
R
DSon
7.1 mΩ.
2. Pinning information
Table 1:
1
2
3
mb
Pinning - SOT78 (TO-220AB) and SOT404 (D
2
-PAK), simplified outline and symbol
Simplified outline
[1]
Pin Description
gate (g)
drain (d)
source (s)
mounting base;
connected to
drain (d)
Symbol
mb
d
mb
g
s
MBB076
2
1
MBK106
3
MBK116
1 2 3
SOT78 (TO-220AB)
[1]
It is not possible to make connection to pin 2 of the SOT404 package.
SOT404 (D
2
-PAK)

PHP119NQ06T Related Products

PHP119NQ06T PHB119NQ06T
Description N-channel TrenchMOS standard level FET N-channel TrenchMOS standard level FET
Is it Rohs certified? conform to conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknown _compli
Configuration Single Single
Maximum drain current (Abs) (ID) 75 A 75 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e3 e3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 200 W 200 W
surface mount NO YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
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