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“Standard”:
2.
3.
4.
5.
6.
7.
8.
9.
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11.
12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
THYRISTORS
5P4J,5P4J-Z,5P4J-ZK,5P6J,5P6J-Z,5P6J-ZK
5 A MOLD THYRISTOR
The 5P[ ]J, 5P[ ]J-Z, and 5P[ ]J-ZK are a P gate all diffused mold type Thyristor granted 5 A On-state Average Current (T
C
=
95°C) with rated voltages up to 400 V or 600 V.
<R>
FEATURES
• Suitable for capacitor discharge applications with high pulse current rating.
• I
GT
≤
200
μ
A
• Employs flame-retardant epoxy resin for casing (UL94V-0).
• Surface mounting (Z and ZK)
<R>
APPLICATIONS
• Contact-less switch for electronic devices, ignition devices, electronic household appliances and other light industry
equipment
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18332EJ3V0DS00 (3rd edition)
(Previous No. SC-2113)
Date Published September 2006 NS CP(K)
Printed in Japan
1988, 2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
5P4J,5P4J-Z,5P4J-ZK,5P6J,5P6J-Z,5P6J-ZK
MAXIMUM RATINGS
<R>
CHARACTERISTICS
Non-repetitive Peak Reverse Voltage
Non-repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Off-state Voltage
Average On-state Current
Effective On-state Current
Surge On-state Current
Fusing Current
Critical Rate Rise of On-state Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Forward Current
Peak Gate Reverse Voltage
Junction Temperature
Storage Temperature
SYMBOL
V
RSM
V
DSM
V
RRM
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
5P4J, 5P4J-Z, 5P4J-ZK
500
500
400
400
5P6J, 5P6J-Z, 5P6J-ZK
700
700
600
600
UNIT
V
V
V
V
A
A
A
As
A/
μ
s
W
W
A
V
°C
°C
−
−
−
−
2
REMARK
R
GK
= 1 kΩ
R
GK
= 1 kΩ
R
GK
= 1 kΩ
R
GK
= 1 kΩ
See Fig. 11
5 (T
C
= 95°C,
θ
= 180°, Single phase half wave)
8
65 (f = 50 Hz, sine half wave, 1 cycle)
20 (1 ms
≤
t
≤
10 ms)
50
2 (f
≥
50 Hz, Duty
≤
10%)
0.2
1 (f
≥
50 Hz, Duty
≤
10%)
6
−40
to +125
−55
to +150
See Fig. 2
−
−
See Fig. 3
∫
i
T
2
dt
dI
T
/dt
P
GM
P
G(AV)
I
FGM
V
RGM
T
j
T
stg
<R>
ELECTRICAL CHARACTERISTICS (T
j
= 25°C, R
GK
= 1 kΩ)
CHARACTERISTICS
Repetitive Peak Reverse Current
Repetitive Peak Off-state Current
Critical Rate Rise of Off-state Voltage
On-state Voltage
Gate-trigger Current
Gate-trigger Voltage
Gate Non-trigger Voltage
Holding Current
Circuit Commuted Turn-off Time
SYMBOL
I
RRM
I
DRM
dV
D
/dt
V
TM
I
GT
V
GT
V
GD
I
H
t
q
TEST CONDITIONS
V
RM
= V
RRM
V
DM
= V
DRM
V
DM
= 2/3 V
DRM
, T
j
= 125°C
I
TM
= 10 A
V
DM
= 6 V, R
L
= 100
Ω
V
DM
= 6 V, R
L
= 100
Ω
V
DM
= 1/2 V
DRM
, T
j
= 125°C
V
DM
= 24 V, I
TM
= 10 A
I
TM
= 3 A, V
R
≥
25 V
V
DM
= 2/3 V
DRM
, dI
R
/dt = 15 A/
μ
s
dV
D
/dt = 3 V/
μ
s, T
j
= 125°C
Thermal Resistance
2
MIN.
TYP.
MAX.
100
2
100
2
UNIT
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
−
−
−
−
−
−
−
−
0.2
−
−
−
−
3
μ
A
mA
μ
A
mA
V/
μ
s
V
−
1.6
200
0.8
−
−
−
−
1
80
μ
A
V
V
mA
−
−
−
−
−
μ
s
R
th(j-c)
R
th(j-a)
Junction to case DC
Junction to ambient DC
Note
−
−
−
−
3
62.5
°C/W
Note
Mount on 0.7 x 7.5 cm ceramic substrate
2
Data Sheet D18333EJ2V0DS
PCB Design
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