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MRF160

Description
fet RF N CH 28v 50ma 249-06
Categorysemiconductor    Discrete semiconductor   
File Size854KB,12 Pages
ManufacturerM/A-COM Tech(MACOM)
Websitehttp://www.macom.com
Environmental Compliance  
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fet RF N CH 28v 50ma 249-06

MRF160 Parametric

Parameter NameAttribute value
Datasheets
MRF160
Standard Package20
CategoryDiscrete Semiconductor Products
FamilyRF FETs
PackagingTray
Transistor TypeN-Channel
Frequency30MHz ~ 500MHz
Gai18dB
Voltage - Tes28V
Current Rating1A
Noise Figure-
Current - Tes50mA
Power - Outpu4W
Voltage - Rated65V
Package / Case249-06
Supplier Device Package249-06, Style 3
Dynamic CatalogRF MOSFETs
Other Names1465-1159
MRF160
The RF MOSFET Line: Broadband Power FET
4W, to 500MHz, 28V
Designed primarily for wideband large–signal output and
driver from 30–500 MHz.
N–Channel enhancement mode MOSFET
Rev. V1
Product Image
Guaranteed 28 V, 500 MHz performance
Output power = 4.0 W
Gain = 16 dB (min.)
Efficiency = 55% (typ.)
Excellent thermal stability, ideally suited for Class A operation
Facilitates manual gain control, ALC and modulation techniques
100% Tested for load mismatch at all phase angles with 30:1 VSWR
Low Crss – 0.8 pF Typical at VDS = 28 V
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support

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