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IRF820STRR

Description
Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size172KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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IRF820STRR Overview

Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

IRF820STRR Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codecompliant
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)2.5 A
Maximum drain-source on-resistance3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment50 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

IRF820STRR Related Products

IRF820STRR IRF820STRL
Description Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code D2PAK D2PAK
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 4 4
Reach Compliance Code compliant compliant
Shell connection DRAIN DRAIN
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 500 V 500 V
Maximum drain current (ID) 2.5 A 2.5 A
Maximum drain-source on-resistance 3 Ω 3 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-263AB
JESD-30 code R-PSSO-G2 R-PSSO-G2
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power consumption environment 50 W 50 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface TIN LEAD TIN LEAD
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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