IRFP054N-205PBF datasheet, PDF

IRFP054N-205PBF: DescriptionPower Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size262KB，5 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRFP054N-205PBF Overview

Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	360 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (ID)	81 A
Maximum drain-source on-resistance	0.012 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	250
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	290 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN OVER NICKEL
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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