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RN2112(T5L,F,T)

Description
tran pnp ssm -50v -100a
Categorysemiconductor    Discrete semiconductor   
File Size271KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance  
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RN2112(T5L,F,T) Overview

tran pnp ssm -50v -100a

RN2112(T5L,F,T) Parametric

Parameter NameAttribute value
Datasheets
RN2112-13
Product Photos
SC-75, SOT-416
Standard Package3,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single, Pre-Biased
PackagingTape & Reel (TR)
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)22k
Resistor - Emitter Base (R2) (Ohms)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transiti200MHz
Power - Max100mW
Mounting TypeSurface Mou
Package / CaseSC-75, SOT-416
Supplier Device PackageSSM
Dynamic CatalogPNP Pre-biased Transistors
Other NamesRN2112(T5LFT)TR
RN2112,RN2113
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2112, RN2113
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Built-in bias resistors
Simplified circuit design
Fewer parts and simplified manufacturing process
Complementary to RN1112, RN1113
Unit: mm
Equivalent Circuit
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
−50
−50
−5
−100
100
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN2112
RN2113
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
R1
Test
Circuit
Test Condition
V
CB
=
−50
V, I
E
= 0
V
EB
=
−5
V, I
C
= 0
V
CE
=
−5
V, I
C
=
−1
mA
I
C
=
−5
mA, I
B
=
−0.25
mA
V
CE
=
−10
V, I
C
=
−5
mA
V
CB
=
−10
V, I
E
= 0, f = 1 MHz
Min
120
15.4
32.9
Typ.
−0.1
200
3
22
47
Max
−100
−100
400
−0.3
6
28.6
61.1
Unit
nA
nA
V
MHz
pF
kΩ
Start of commercial production
1990-12
1
2014-03-01

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