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BCR 185T E6327

Description
trans prebias pnp 250mw sc75
Categorysemiconductor    Discrete semiconductor   
File Size745KB,18 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BCR 185T E6327 Overview

trans prebias pnp 250mw sc75

BCR 185T E6327 Parametric

Parameter NameAttribute value
Datasheets
BCR185 (2005)
Standard Package3,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single, Pre-Biased
PackagingTape & Reel (TR)
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)10k
Resistor - Emitter Base (R2) (Ohms)47k
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transiti200MHz
Power - Max250mW
Mounting TypeSurface Mou
Package / CaseSC-75, SOT-416
Supplier Device PackagePG-SC-75
Other NamesBCR185TE6327XTSP000014106
BCR185...
PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R
1
= 10 kΩ ,
R
2
= 47 kΩ )
BCR185S / U: Two internally isolated
transistors with good matching
in one multichip package
BCR185/F/L3
BCR185T/W
C
3
BCR185S/U
C1
6
B2
5
E2
4
R
1
R
1
R
2
TR2
R
1
R
2
TR1
R
2
1
B
2
E
EHA07183
1
E1
2
B1
3
C2
EHA07173
Type
BCR185
BCR185F
BCR185L3
BCR185S
BCR185T
BCR185U
BCR185W
Marking
WNs
WNs
WN
WNs
WNs
WNs
WNs
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Package
SOT23
TSFP-3
TSLP-3-4
SC75
SOT323
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
1
Mar-03-2005

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Power - Max 250mW 250mW
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