SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 - MARCH 2001
PARTMARKING DETAILS –
BCW66F –
EF
BCW66G –
EG
BCW66H –
EH
BCW66FR –
BCW66GR –
BCW66HR –
7P
5T
7M
BCW66
E
C
B
COMPLEMENTARY TYPE – BCW68
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current(10ms)
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
:T
stg
VALUE
75
45
5
800
1000
100
330
-55 to +150
UNIT
V
V
V
mA
mA
mA
mW
°C
TBA
BCW66
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter
Cut-off Current
Emitter-Base Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Static
Forward
Current
Transfer
SYMBOL MIN.
V
(BR)CEO
45
V
(BR)CES
V
(BR)EBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
75
100
35
110
160
60
180
250
100
100
8
12
80
2
10
75
5
20
20
20
TYP.
MAX.
UNIT
CONDITIONS.
V
V
V
nA
µ
A
nA
I
CEO
=10mA
IC=10
µ
A
I
EBO
=10
µ
A
V
CES
= 45V
V
CES
= 45V , T
amb
=150°C
V
EBO
=4V
I
C
=100mA, I
B
= 10mA
I
C
= 500mA, I
B
= 50mA*
I
C
=500mA, I
B
=50mA*
I
C
= 10mA, V
CE
= 1V
I
C
=100mA, V
CE
= 1V*
I
C
=500mA, V
CE
= 2V*
I
C
= 10mA, V
CE
= 1V
I
C
=100mA, V
CE
= 1V*
I
C
=500mA, V
CE
= 2V*
I
C
= 10mA, V
CE
= 1V
I
C
=100mA, V
CE
= 1V*
I
C
=500mA, V
CE
= 2V*
MHz I
C
=20mA, V
CE
=10V
f = 100MHz
pF
pF
dB
V
CB
=10V, f =1MHz
V
EB
=0.5V, f =1MHz
I
C
= 0.2mA, V
CE
= 5V
R
G
=1k
Ω
I
C
=150mA
I
B1
=- I
B2
=15mA
R
L
=150
Ω
0.3 V
0.7 V
2
V
BCW66F h
FE
160
250
BCW66G h
FE
250
400
BCW66H h
FE
350
630
Transition Frequency
Output Capacitance
Input Capacitance
Noise Figure
f
T
C
obo
C
ibo
N
Switching times:
Turn-On Time
Turn-Off Time
t
on
t
off
100
400
ns
ns
Spice parameter data is available upon request for this device
*Measured under pulsed conditions.
TBA
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