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SH8G41

Description
TOSHIBA HIGH−SPEED THYRISTOR SILICON PLANAR TYPE
CategoryAnalog mixed-signal IC    Trigger device   
File Size160KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

SH8G41 Overview

TOSHIBA HIGH−SPEED THYRISTOR SILICON PLANAR TYPE

SH8G41 Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ConfigurationSINGLE
Maximum DC gate trigger current50 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current150 mA
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum on-state current350000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak off-state leakage current250 µA
Off-state repetitive peak voltage400 V
Repeated peak reverse voltage400 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Trigger device typeSCR
SH8G41
TOSHIBA HIGH
SPEED THYRISTOR SILICON PLANAR TYPE
SH8G41
FOR AUTOMATIC
STROBE FLASHER APPLICATIONS
−−−
DISCHARGER (Chopper)
l
Type No. SH8G41 is Designed for a Small Package Device Having
ShortedTurn−Off Time and Low Turn−On Loss at High Current.
l
Repetitive Peak Off
State Voltage and Peak Reverse Voltage
: V
DRM
= V
RRM
= 400V
l
Repetitive Peak Surge On
State Current : I
TRM
= 350A
l
Critical Rate of Rise of On
State Current : di/dt = 100A/µs
l
Plastic Mold Package
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak Off−State and
Reverse Voltage
Non−Repetitive Peak Reverse
Voltage
(Note 1)
Repetitive Peak Surge On−State
Current
(Note 2)
Critical Rate of Rise of On−State
Current
(Note 3)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
SYMBOL
V
DRM
V
RRM
V
RSM
I
TRM
di /dt
P
GM
P
G (AV)
I
GM
T
j
T
stg
RATING
400
450
350
100
5
0.5
2
−40~125
−40~125
UNIT
V
V
A
A / µs
W
W
A
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 2.0g
TO−220AB
13−10G1B
Note 1:
Note 2:
Note 3:
Non
Rep. < 5ms, T
j
= 0~125°C
C
M
= 1000µF
i
G
= 100mA
t
gw
= 10µs
t
gr
250ns
1
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