SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 FEBRUARY 1996
7
FEATURES
* Suitable for AF drivers and output stages
* High collector current and Low V
CE(sat)
COMPLEMENTARY TYPE
PARTMARKING DETAIL
BCP69
BCP68
BCP68 25
C
BCP68
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
25
20
5
100
10
10
0.5
0.6
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
25
20
5
2
1
2
-55 to +150
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
TYP.
MAX.
UNIT
V
V
V
nA
CONDITIONS.
I
C
=10
µ
A
I
C
= 30mA *
I
E
=10
µ
A
V
CB
=25V
V
CB
=25V, T
amb
=150°C
V
EB
=5V
I
C
=1A, I
B
=100mA*
I
C
=5A, V
CE
=10V*
I
C
=1A, V
CE
=1V*
I
C
=5mA, V
CE
=10V*
I
C
=500mA, V
CE
=1V*
I
C
=500mA, V
CE
=1V*
MHz
I
C
=100mA, V
CE
=5V,
f=100MHz
µ
A
µ
A
Emitter Cut-Off Current I
EBO
V
CE(sat)
V
BE(on)
V
V
V
1.0
400
400
50
Static Forward Current h
FE
63
BCP68
Transfer Ratio
BCP68-25 160
Transition Frequency
f
T
250
100
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
For typical characteristics graphs see FMMT449 datasheet.
3 - 19
京公网安备 11010802033920号
EEWORLD
