KSB1116/1116A
KSB1116/1116A
Audio Frequency Power Amplifier & Medium
Speed Switching
• Complement to KSD1616/1616A
1
TO-92
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
: KSB1116
: KSB1116A
: KSB1116
: KSB1116A
Ratings
-60
-80
-50
-60
-6
-1
-2
0.75
150
-55 ~ 150
Units
V
V
V
V
V
A
A
W
°C
°C
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
BE
(on)
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
* Base-Emitter On Voltage
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
: KSB1116
: KSB1116A
Test Condition
V
CB
= -60V, I
E
=0
V
EB
= -6V, I
C
= 0
V
CE
= -2V, I
C
= -100mA
V
CE
= -2V, I
C
= -1A
V
CE
= -2V, I
C
= -50mA
I
C
= -1A, I
B
= -50mA
I
C
= -1A, I
B
= -50mA
V
CB
= -10V, I
E
=0, f=1MHz
V
CE
= -2V, I
C
= -100mA
V
CC
= -10V, I
C
= -100mA
I
B1
= -I
B2
= -10mA
V
BE
(off)= 2~3V
70
135
135
81
-600
-650
-0.2
-0.9
25
120
0.07
0.7
0.07
Min.
Typ.
Max.
-100
-100
600
400
-700
-0.3
-1.2
mV
V
V
pF
MHz
µs
µs
µs
Units
nA
nA
* Pulse Test: PW
≤350µs,
Duty Cycle≤2%
h
FE
Classification
Classification
h
FE1
Y
135 ~ 270
G
200 ~ 400
L
300 ~ 600
©2002 Fairchild Semiconductor Corporation
Rev. A2, January 2002
KSB1116/1116A
Typical Characteristics
-100
I
B
= -250
µ
A
I
B
= -200
µ
A
-1.0
I
B
= -5.0mA
I
B
= -4.5mA
I
B
= -3.5mA
I
B
= -4.0mA
I
C
[mA], COLLECTOR CURRENT
-80
I
C
[A], COLLECTOR CURRENT
-0.8
I
B
= -3.0mA
I
B
= -2.5mA
I
B
= -150
µ
A
-60
-0.6
I
B
= -2.0mA
I
B
= -1.5mA
I
B
= -100
µ
A
-40
-0.4
I
B
= -1.0mA
I
B
= -0.5mA
I
B
= -50
µ
A
-20
-0.2
0
0
-2
-4
-6
-8
-10
0.0
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
-10
V
CE
= -2V
I
C
= 20 I
B
h
FE
, DC CURRENT GAIN
100
-1
V
BE
(sat)
10
-0.1
V
CE
(sat)
1
-0.01
-0.1
-1
-10
-0.01
-0.01
-0.1
-1
-10
I
C
[mA], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
1000
V
CC
= -10V
I
C
= 10I
B1
= -10I
B2
I
E
=0
f = 1MHz
t
ON
, t
STG
, t
F
[
µ
s], TIME
C
ob
[pF], CAPACITANCE
-1
1
100
t
STG
0.1
10
t
F
t
ON
0.01
-0.001
-0.01
-0.1
1
-1
-10
-100
I
C
[A], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Switching Time
Figure 6. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
Rev. A2, January 2002
KSB1116/1116A
Typical Characteristics
(Continued)
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
-10
V
CE
= -2V
I
C
[A], COLLECTOR CURRENT
100
-1
200ms
10
ms
PW
=1
m
s
10
DC
-0.1
1
-0.01
-0.1
-1
-10
-0.01
-1
-10
KSB1116A
-100
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Current Gain Bandwidth Product
Figure 8. Safe Operating Area
0.8
0.7
P
C
[W], POWER DISSIPATION
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
o
75
100
125
150
175
T
a
[ C], AMBIENT TEMPERATURE
Figure 9. Power Derating
©2002 Fairchild Semiconductor Corporation
KSB1116
Rev. A2, January 2002
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E
2
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FACT Quiet Series™
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®
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LittleFET™
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Power247™
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®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
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®
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STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
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®
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. H4
Analog electronics
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