EEWORLDEEWORLDEEWORLD

Part Number

Search

KSC1623OMTF

Description
transistor npn 50v 100ma sot-23
CategoryDiscrete semiconductor    The transistor   
File Size58KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

KSC1623OMTF Online Shopping

Suppliers Part Number Price MOQ In stock  
KSC1623OMTF - - View Buy Now

KSC1623OMTF Overview

transistor npn 50v 100ma sot-23

KSC1623OMTF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)90
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
KSC1623
KSC1623
Low Frequency Amplifier & High Frequency
OSC.
• Complement to KSA812
2
1
3
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
60
50
5
100
200
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=1mA
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
=1mA
V
CE
=6V, I
C
=10mA
V
CB
=6V, I
E
=0, f=1MHz
0.55
90
200
0.15
0.86
0.62
250
3
Min.
Typ.
Max.
0.1
0.1
600
0.3
1.0
0.65
V
V
V
MHz
pF
Units
µA
µA
h
FE
Classification
Classification
h
FE
O
90 ~ 180
Y
135 ~ 270
G
200 ~ 400
L
300 ~ 600
Marking
C1 O
h
FE
grade
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002

KSC1623OMTF Related Products

KSC1623OMTF KSC1623GMTF_Q
Description transistor npn 50v 100ma sot-23 transistors bipolar - bjt npn epitaxial transistor

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1167  1783  600  2465  2078  24  36  13  50  42 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号