ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3
January 2002
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3
EcoSPARK
TM
300mJ, 400V, N-Channel Ignition IGBT
General Description
The ISL9V3040D3S, ISL9V3040S3S, and ISL9V3040P3 are the
next generation ignition IGBTs that offer outstanding SCIS
capability in the space saving D-Pak (TO-252), as well as the
industry standard D²-Pak (TO-263), and TO-220 plastic packages.
This device is intended for use in automotive ignition circuits,
specifically as a coil driver. Internal diodes provide voltage clamping
without the need for external components.
EcoSPARK™
devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Formerly Developmental Type 49362
Applications
• Automotive Ignition Coil Driver Circuits
• Coil- On Plug Applications
Features
• Space saving D-Pak package availability
• SCIS Energy = 300mJ at T
J
= 25
o
C
• Logic Level Gate Drive
Package
JEDEC TO-252AA
D-Pak
JEDEC TO-263AB
D²-Pak
JEDEC TO-220AB
Symbol
COLLECTOR
R
1
G
E
G
E
GATE
R
2
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
EMITTER
Device Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
BV
CER
BV
ECS
E
SCIS25
E
SCIS150
I
C25
I
C110
V
GEM
P
D
T
J
T
STG
T
L
T
pkg
ESD
Parameter
Collector to Emitter Breakdown Voltage (I
C
= 1 mA)
Emitter to Collector Voltage - Reverse Battery Condition (I
C
= 10 mA)
At Starting T
J
= 25°C, I
SCIS
= 14.2A, L = 3.0 mHy
At Starting T
J
= 150°C, I
SCIS
= 10.6A, L = 3.0 mHy
Collector Current Continuous, At T
C
= 25°C, See Fig 9
Collector Current Continuous, At T
C
= 110°C, See Fig 9
Gate to Emitter Voltage Continuous
Power Dissipation Total T
C
= 25°C
Power Dissipation Derating T
C
> 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500Ω
Ratings
430
24
300
170
21
17
±10
150
1.0
-40 to 175
-40 to 175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/°C
°C
°C
°C
°C
kV
©2002 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 Rev. C, February 2002
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3
Package Marking and Ordering Information
Device Marking
V3040D
V3040S
V3040D
V3040S
V3040P
Device
ISL9V3040D3ST
ISL9V3040S3ST
ISL9V3040D3S
ISL9V3040S3S
ISL9V3040P3
Package
TO-252AA
TO-263AB
TO-252AA
TO-263AB
TO-220AB
Reel Size
330mm
330mm
Tube
Tube
Tube
Tape Width
16mm
24mm
N/A
N/A
N/A
Quantity
2500 units
800 units
75 units
50 units
50 units
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BV
CER
Collector to Emitter Breakdown Voltage I
C
= 2mA, V
GE
= 0,
R
G
= 1KΩ, See Fig. 15
T
J
= -40 to 150°C
Collector to Emitter Breakdown Voltage I
C
= 10mA, V
GE
= 0,
R
G
= 0, See Fig. 15
T
J
= -40 to 150°C
Emitter to Collector Breakdown Voltage I
C
= -75mA, V
GE
= 0V,
T
C
= 25°C
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
GES
= ± 2mA
V
CER
= 250V, T
C
= 25°C
R
G
= 1KΩ, See T
C
= 150°C
Fig. 11
V
EC
= 24V,
See Fig. 11
T
C
= 25°C
T
C
= 150°C
370
400
430
V
BV
CES
390
420
450
V
BV
ECS
BV
GES
I
CER
30
±12
-
-
-
-
-
10K
-
±14
-
-
-
-
70
-
-
-
25
1
1
40
-
26K
V
V
µA
mA
mA
mA
Ω
Ω
I
ECS
R
1
R
2
Emitter to Collector Leakage Current
Series Gate Resistance
Gate to Emitter Resistance
On State Characteristics
V
CE(SAT)
V
CE(SAT)
V
CE(SAT)
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
I
C
= 6A,
V
GE
= 4V
I
C
= 10A,
V
GE
= 4.5V
I
C
= 15A,
V
GE
= 4.5V
T
C
= 25°C,
See Fig. 3
T
C
= 150°C,
See Fig. 4
T
C
= 150°C
-
-
-
1.25
1.58
1.90
1.60
1.80
2.20
V
V
V
Dynamic Characteristics
Q
G(ON)
V
GE(TH)
Gate Charge
Gate to Emitter Threshold Voltage
I
C
= 10A, V
CE
= 12V,
V
GE
= 5V, See Fig. 14
I
C
= 1.0mA,
V
CE
= V
GE,
See Fig. 10
T
C
= 25°C
T
C
= 150°C
-
1.3
0.75
-
17
-
-
3.0
-
2.2
1.8
-
nC
V
V
V
V
GEP
Gate to Emitter Plateau Voltage
I
C
= 10A, V
CE
= 12V
Switching Characteristics
t
d(ON)R
t
rR
t
d(OFF)L
t
fL
SCIS
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
Self Clamped Inductive Switching
V
CE
= 14V, R
L
= 1Ω,
V
GE
= 5V, R
G
= 1KΩ
T
J
= 25°C, See Fig. 12
V
CE
= 300V, L = 500µHy,
V
GE
= 5V, R
G
= 1KΩ
T
J
= 25°C, See Fig. 12
T
J
= 25°C, L = 3.0 mHy,
R
G
= 1KΩ, V
GE
= 5V, See
Fig. 1 & 2
-
-
-
-
-
0.7
2.1
4.8
2.8
-
4
7
15
15
300
µs
µs
µs
µs
mJ
Thermal Characteristics
R
θJC
Thermal Resistance Junction-Case
TO-252, TO-263, TO-220
-
-
1.0
°C/W
©2002 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 Rev.C, February 2002
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3
Typical Performance Curves
(Continued)
I
SCIS
, INDUCTIVE SWITCHING CURRENT (A)
R
G
= 1kΩ, V
GE
= 5V,V
dd
= 14V
25
I
SCIS
, INDUCTIVE SWITCHING CURRENT (A)
30
30
R
G
= 1kΩ, V
GE
= 5V,V
dd
= 14V
25
20
20
15
T
J
= 25°C
T
J
= 150°C
10
15
T
J
= 25°C
10
T
J
= 150°C
5
SCIS Curves valid for V
clamp
Voltages of <430V
0
0
2
4
6
8
10
5
SCIS Curves valid for V
clamp
Voltages of <430V
0
0
25
50
75
100
125
150
175
200
t
CLP
, TIME IN CLAMP (µS)
L, INDUCTANCE (mHy)
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1.30
I
CE
= 6A
V
GE
= 3.7V
V
GE
= 4.0V
1.26
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1.8
I
CE
= 10A
1.7
V
GE
= 3.7V
1.6
V
GE
= 4.0V
1.22
V
GE
= 4.5V
1.18
V
GE
= 8.0V
V
GE
= 5.0V
1.5
1.4
V
GE
= 4.5V
V
GE
= 5.0V
V
GE
= 8.0V
1.3
1.14
-75
1.2
-75
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (°C)
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (°C)
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
25
V
GE
= 8.0V
V
GE
= 5.0V
20
V
GE
= 4.5V
V
GE
= 4.0V
15
V
GE
= 3.7V
Figure 4. Collector to Emitter On-State Voltage
vs Junction Temperature
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
25
V
GE
= 8.0V
V
GE
= 5.0V
20
V
GE
= 4.5V
V
GE
= 4.0V
15
V
GE
= 3.7V
10
10
5
T
J
= - 40°C
0
0
1.0
2.0
3.0
4.0
5
T
J
= 25°C
0
0
1.0
2.0
3.0
4.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage vs
Collector Current
Figure 6. Collector to Emitter On-State Voltage
vs Collector Current
©2002 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 Rev.C, February 2002
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3
Typical Performance Curves
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
25
V
GE
= 8.0V
V
GE
= 5.0V
20
V
GE
= 4.5V
V
GE
= 4.0V
15
V
GE
= 3.7V
25
DUTY CYCLE < 0.5%, V
CE
= 5V
PULSE DURATION = 250µs
20
15
T
J
= 150°C
10
T
J
= 25°C
5
T
J
= -40°C
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
10
5
T
J
= 175°C
0
0
1.0
2.0
3.0
4.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
GE
, GATE TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
25
V
GE
= 4.0V
I
CE
, DC COLLECTOR CURRENT (A)
V
TH
, THRESHOLD VOLTAGE (V)
20
2.0
2.2
Figure 8. Transfer Characteristics
V
CE
= V
GE
I
CE
= 1mA
1.8
15
1.6
10
1.4
5
1.2
0
25
50
75
100
125
150
175
1.0
-50
-25
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (°C)
T
J
JUNCTION TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
10000
V
ECS
= 24V
1000
SWITCHING TIME (µS)
Figure 10. Threshold Voltage vs Junction
Temperature
12
I
CE
= 6.5A, V
GE
= 5V, R
G
= 1KΩ
Resistive t
OFF
LEAKAGE CURRENT (µA)
10
Inductive t
OFF
8
100
10
V
CES
= 300V
1
V
CES
= 250V
0.1
-50
-25
0
25
50
75
100
125
150
175
6
4
Resistive t
ON
2
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
Figure 12. Switching Time vs Junction
Temperature
©2002 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 Rev.C, February 2002
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3
Typical Performance Curves
(Continued)
1600
FREQUENCY = 1 MHz
V
GE
, GATE TO EMITTER VOLTAGE (V)
7
6
5
V
CE
= 12V
4
3
2
1
0
0
5
10
15
20
25
0
4
8
12
16
20
24
28
32
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
8
I
G(REF)
= 1mA, R
L
= 1.25Ω, T
J
= 25°C
C, CAPACITANCE (pF)
1200
C
IES
800
C
RES
400
C
OES
0
V
CE
= 6V
Q
G
, GATE CHARGE (nC)
Figure 13. Capacitance vs Collector to Emitter
Voltage
430
I
CER
= 10mA
BV
CER
, BREAKDOWN VOLTAGE (V)
425
420
Figure 14. Gate Charge
T
J
= - 40°C
415
410
405
400
395
390
10
100
R
G
, SERIES GATE RESISTANCE (kΩ)
1000
2000
3000
T
J
= 175°C
T
J
= 25°C
Figure 15. Breakdown Voltage vs Series Gate Resistance
Z
thJC
, NORMALIZED THERMAL RESPONSE
10
0
0.5
0.2
0.1
10
-1
t
1
P
D
0.02
0.01
SINGLE PULSE
0.05
t
2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θJC
X R
θJC
) + T
C
10
-3
10
-2
10
-1
10
0
10
-2
10
-5
10
-4
T
1
, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
©2002 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 Rev.C, February 2002
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