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BCR 158 B6327

Description
trans prebias pnp 200mw sot23-3
Categorysemiconductor    Discrete semiconductor   
File Size833KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BCR 158 B6327 Overview

trans prebias pnp 200mw sot23-3

BCR 158 B6327 Parametric

Parameter NameAttribute value
Datasheets
BCR158
Product Photos
SOT-23-3
Standard Package30,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single, Pre-Biased
PackagingTape & Reel (TR)
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)2.2k
Resistor - Emitter Base (R2) (Ohms)47k
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transiti200MHz
Power - Max200mW
Mounting TypeSurface Mou
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackagePG-SOT23-3
Other NamesBCR158B6327XTSP000056353
BCR158...
PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R
1
=2.2 kΩ,
R
2
=47 kΩ)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BCR158
BCR158W
C
3
R
1
R
2
1
B
2
E
EHA07183
Type
BCR158
BCR158W
Marking
WIs
WIs
1=B
1=B
Pin Configuration
2=E
2=E
3=C
3=C
-
-
-
-
-
-
Package
SOT23
SOT323
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
BCR158,
T
S
102°C
BCR158W,
T
S
124°C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CEO
V
CBO
V
i(fwd)
V
i(rev)
I
C
P
tot
200
250
150
-65 ... 150
°C
Value
50
50
20
5
100
mA
mW
Unit
V
1
2011-08-29

BCR 158 B6327 Related Products

BCR 158 B6327 BCR 158W E6327 BCR 158F E6327 BCR158WE6327HTSA1
Description trans prebias pnp 200mw sot23-3 trans prebias pnp 250mw sot323-3 TRANS PREBIAS PNP 250MW TSFP-3 TRANS PREBIAS PNP 250MW SOT323-3
Power - Max 200mW 250mW 250mW -
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