Standard SRAM, 256X4, 350ns, MOS, CDIP22,
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Objectid | 1435963089 |
| package instruction | DIP, DIP22,.4 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Maximum access time | 350 ns |
| JESD-30 code | R-XDIP-T22 |
| JESD-609 code | e0 |
| memory density | 1024 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 4 |
| Humidity sensitivity level | 2A |
| Number of terminals | 22 |
| word count | 256 words |
| character code | 256 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -55 °C |
| organize | 256X4 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP22,.4 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| surface mount | NO |
| technology | MOS |
| Temperature level | OTHER |
| Terminal surface | TIN LEAD |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
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