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BYV26BT/R

Description
DIODE 0.65 A, 400 V, SILICON, SIGNAL DIODE, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size75KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BYV26BT/R Overview

DIODE 0.65 A, 400 V, SILICON, SIGNAL DIODE, Signal Diode

BYV26BT/R Parametric

Parameter NameAttribute value
MakerNXP
package instructionE-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeE-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current0.65 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
Certification statusNot Qualified
GuidelineIEC-134
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.03 µs
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV26 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of February 1994
1996 May 30

BYV26BT/R Related Products

BYV26BT/R BYV26DT/R BYV26ET/R BYV26GT/R BYV26AT/R BYV26G
Description DIODE 0.65 A, 400 V, SILICON, SIGNAL DIODE, Signal Diode DIODE 0.65 A, 800 V, SILICON, SIGNAL DIODE, Signal Diode 0.65A, 1000V, SILICON, SIGNAL DIODE DIODE 0.68 A, 1400 V, SILICON, SIGNAL DIODE, Signal Diode DIODE 0.65 A, 200 V, SILICON, SIGNAL DIODE, Signal Diode DIODE 0.68 A, 1400 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, SOD-57, 2 PIN, Signal Diode
package instruction E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2
Number of components 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Maximum output current 0.65 A 0.65 A 0.65 A 0.68 A 0.65 A 0.68 A
Package body material GLASS GLASS GLASS GLASS GLASS GLASS
Package shape ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 400 V 800 V 1000 V 1400 V 200 V 1400 V
Maximum reverse recovery time 0.03 µs 0.075 µs 0.075 µs 0.15 µs 0.03 µs 0.15 µs
surface mount NO NO NO NO NO NO
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Maker NXP NXP NXP - NXP NXP
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -
Guideline IEC-134 IEC-134 IEC-134 IEC-134 IEC-134 -
Base Number Matches 1 1 1 1 - -
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