G3SBA20-M3, G3SBA60-M3, G3SBA80-M3
www.vishay.com
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
• High case dielectric strength of 1500 V
RMS
• Solder dip 275 °C max. 10 s, per JESD 22-B106
-
~
~
+
~
-
Case
Style GBU
~
+
Case
Style GBU
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for monitor, TV, printer, switching mode power supply,
adapter, audio equipment, and home appliances
applications.
GBU
4A
200 V, 600 V, 800 V
80 A
5 μA
1.0 V
150 °C
In-line
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
= 2.0 A
T
J
max.
Diode variations
MECHANICAL DATA
Case:
GBU
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked on body
Mounting Torque:
10 cm-kg (8.8 inches-lbs) max.
Recommended Torque:
5.7 cm-kg (5 inches-lbs)
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
output current at
T
C
= 100 °C
T
A
= 25 °C
(1)
(2)
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
2
t
T
J
, T
STG
G3SBA20
200
140
200
G3SBA60
600
420
600
4.0
2.3
80
27
-55 to +150
G3SBA80
800
560
800
UNIT
V
V
V
A
A
A
2
s
°C
Peak forward surge current single sine-wave
superimposed on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
Notes
(1)
Unit case mounted on aluminum plate heatsink
(2)
Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage per diode
Maximum DC reverse current at rated DC
blocking voltage per diode
TEST CONDITIONS
2.0 A
T
J
= 25 °C
T
J
= 125 °C
SYMBOL
V
F
I
R
G3SBA20
G3SBA60
1.00
5.0
400
G3SBA80
UNIT
V
μA
Revision: 05-Aug-15
Document Number: 89304
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
G3SBA20-M3, G3SBA60-M3, G3SBA80-M3
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JA
(2)
R
JC
(1)
G3SBA20
G3SBA60
26
5.0
G3SBA80
UNIT
°C/W
Notes
(1)
Unit case mounted on aluminum plate heatsink
(2)
Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
ORDERING INFORMATION
(Example)
PREFERRED P/N
G3SBA60-M3/45
G3SBA60-M3/51
UNIT WEIGHT (g)
3.404
3.404
PREFERRED PACKAGE CODE
45
51
BASE QUANTITY
20
250
DELIVERY MODE
Tube
Paper tray
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
4
100
Average Forward Output Current (A)
Instantaneous Forward Current (A)
Heatsink Mounting, T
C
3
10
2
P.C.B. Mounting, T
A
1
1
0.1
0
0
25
50
75
100
125
150
0.01
0.4
0.8
1.2
1.6
2.0
2.4
Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 -
Derating Curve Output Rectified Current
Fig. 3 -
Typical Instantaneous Forward Characteristics Per Diode
100
100
Instantaneous Reverse Current (µA)
Peak Forward Surge Current (A)
T
A
= 125 °C
10
80
60
1
40
0.1
T
A
= 25 °C
20
1.0 Cycle
0
1
10
100
0.01
0
20
40
60
80
100
Number
of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 -
Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 4 -
Typical Reverse Leakage Characteristics Per Diode
Revision: 05-Aug-15
Document Number: 89304
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
G3SBA20-M3, G3SBA60-M3, G3SBA80-M3
www.vishay.com
Vishay General Semiconductor
100
100
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
10
10
1
1
0.1
1
10
100
0.1
0.01
0.1
1
10
100
Reverse Voltage (V)
t - Heating Time (s)
Fig. 5 -
Typical Junction Capacitance Per Diode
Fig. 6 -
Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Case Style GBU
0.880 (22.3)
0.860 (21.8)
0.125 (3.2) x 45°
Chamfer
0.160 (4.1)
0.140 (3.5)
0.140 (3.56)
0.130 (3.30)
9° TYP.
0.020 R (TYP.)
0.310 (7.9)
0.290 (7.4)
0.740 (18.8)
0.720 (18.3)
0.080 (2.03)
0.060 (1.52)
5° TYP.
0.085 (2.16)
0.075 (1.90)
0.085 (2.16)
0.065 (1.65)
0.075
(1.9) R
.
0.100 (2.54)
0.085 (2.16)
0.043 (1.10)
0.035 (0.90)
0.710 (18.0)
0.690 (17.5)
0.080 (2.03)
0.065(1.65)
0.190 (4.83)
0.210 (5.33)
0.022 (0.56)
0.018 (0.46)
Polarity shown on front side of case, positive lead by beveled corner
Revision: 05-Aug-15
Document Number: 89304
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000