VBE 55-12NO7
ECO-PAC
TM
Single Phase Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED)
I
dAV
= 59 A
V
RRM
= 1200 V
t
rr
= 40 ns
V
RSM
V
1200
V
RRM
V
1200
Typ
A
N
D
VBE 55-12NO7
K
Symbol
I
dAV
x
I
dAVM
I
FSM
Conditions
T
C
= 85°C, module
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
59
90
200
220
170
190
200
205
145
150
-40...+150
150
-40...+125
A
A
A
A
A
A
As
A
2
s
A
2
s
A
2
s
°C
°C
°C
V~
V~
2
Features
• Package with DCB ceramic
base plate in low profile
• Isolation voltage 3000 V~
• Planar passivated chips
• Low forward voltage drop
• Leads suitable for PC board soldering
Applications
• Supplies for DC power equipment
• Input and output rectifiers for high
frequency
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Space and weight savings
• Improved temperature and power
cycling capability
• Small and light weight
• Low noise switching
Dimensions in mm (1 mm = 0.0394")
It
2
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
Symbol
I
R
V
F
V
T0
r
T
R
thJC
R
thCH
I
RM
t
rr
a
d
S
d
A
50/60 Hz, RMS
I
ISOL
£
1 mA
t = 1 min
t=1s
3000
3600
Mounting torque (M4)
typ.
Conditions
V
R
= V
RRM
V
R
= V
RRM
I
F
= 30 A
T
VJ
= 25°C
T
VJ
= T
VJM
T
VJ
= 25°C
1.5-2/14-18
Nm/lb.in.
19
g
Characteristic Values
typ.
max.
0.25
1.0
2.71
mA
mA
V
for power-loss calculations only
per diode; DC current
per diode, DC current, typ.
I
F
= 50 A, -diF/dt = 100 A/µs
V
R
= 100 V, L = 0.05 mH, T
VJ
= 100°C
I
F
= 1 A; -di/dt = 200 A/µs; V
R
= 30 V, T
VJ
= 25°C
Max. allowable acceleration
creeping distance on surface
creepage distance in air
6
40
1.31
V
15 mW
0.9 K/W
0.3 K/W
11.4
tbd
A
ns
m/s
2
mm
mm
50
11.2
9.7
Data according to IEC 60747 refer to a single diode unless otherwise stated
x
for resistive load at bridge output.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1-2
032
VBE 55-12NO7
70
A
60
I
F
50
Q
r
5
m
C
4
T
VJ
= 100°C
V
R
= 600V
I
RM
60
A
50
40
T
VJ
= 100°C
V
R
= 600V
T
VJ
=150°C
40
T
VJ
=100°C
T
VJ
= 25°C
30
20
3
2
I
F
= 60A
I
F
= 30A
I
F
= 15A
30
20
I
F
= 60A
I
F
= 30A
I
F
= 15A
1
10
0
0
1
2
3
V
F
V
4
0
100
10
0
0
200
400
A/
m
s 1000
-di
F
/dt
600 A/
m
s 1000
800
-di
F
/dt
Fig. 1 Forward current I
F
versus V
F
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
220
ns
200
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
120
V
V
FR
80
1.2
2.0
T
VJ
= 100°C
V
R
= 600V
T
VJ
= 100°C
I
F
= 30A
t
fr
µs
t
fr
0.8
1.5
K
f
1.0
t
rr
180
I
RM
160
I
F
= 60A
I
F
= 30A
I
F
= 15A
40
V
FR
0.4
0.5
Q
r
0.0
0
40
80
120 °C 160
T
VJ
140
120
0
200
400
600
-di
F
/dt
800
A/
m
s 1000
0
0
200
400
0.0
600 A/
m
s 1000
800
di
F
/dt
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
1
K/W
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
Constants for Z
thJC
calculation:
i
1
2
3
4
R
thi
(K/W)
0.3012
0.116
0.0241
0.4586
t
i
(s)
0.0052
0.0003
0.0004
0.0092
0.1
Z
thJC
0.01
0.001
0.0001
VUE 55-12NO7 / VUE 75-12NO7
0.001
0.01
0.1
1
t
s
10
Fig. 7 Transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2000 IXYS All rights reserved
2-2
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