AO4494L
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4494L combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is for PWM
applications.
Features
V
DS
(V) = 30V
I
D
= 18A
R
DS(ON)
< 6.5mΩ
R
DS(ON)
< 9.5mΩ
(V
GS
= 10V)
(V
GS
= 10V)
(V
GS
= 4.5V)
- RoHS Compliant
- Halogen Free
100% UIS Tested!
100% R
g
Tested!
SOIC-8
D
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
G
S
Maximum
30
±20
18
14
130
32
51
3.1
2
-55 to 150
Units
V
V
A
A
mJ
W
°C
T
C
=25°C
T
C
=70°C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
Repetitive avalanche energy L=0.1mH
Power Dissipation
B
T
C
=25°C
T
C
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
28
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4494L
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=30V, V
GS
=0V
T
J
=125°C
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=18A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=16A
Forward Transconductance
V
DS
=5V, I
D
=18A
Diode Forward Voltage
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
1270
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
170
87
0.8
24
V
GS
=10V, V
DS
=15V, I
D
=18A
12
4.2
4.7
V
GS
=10V, V
DS
=15V, R
L
=0.83Ω,
R
GEN
=3Ω
I
F
=18A, dI/dt=500A/µs
22
19
T
J
=125°C
1.5
130
5.4
8.4
7.5
70
0.75
1
3
1590
240
145
1.5
30
15
5.2
7.8
6.7
3.5
22.5
4
28
24
34
30
1900
310
200
2.3
36
18
6.2
11
6.5
10.1
9.5
2
Min
30
1
5
±100
2.5
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=18A, dI/dt=500A/µs
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
Rev0: Sept 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4494L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140
120
100
7V
I
D
(A)
I
D
(A)
80
60
40
20
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
12
10
R
DS(ON)
(m
Ω
)
V
GS
=4.5V
8
6
4
2
0
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
5
10
V
GS
=10V
Normalized On-Resistance
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
3.5V
20
V
GS
=3V
0
0
1
2
3
4
5
6
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
125°C
25°C
4V
60
40
10V
6V
100
5V
4.5V
80
V
DS
=5V
V
GS
=10V
I
D
=18A
17
5
V
GS
=4.5V
2
I
D
=16A
10
25
I
D
=18A
20
R
DS(ON)
(m
Ω
)
15
125°C
10
5
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
1.0E+00
I
S
(A)
1.0E-01
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
40
125°C
25°C
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4494L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=18A
Capacitance (pF)
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
15
20
25
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
10
30
0
0
C
rss
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
oss
C
iss
8
V
GS
(Volts)
6
4
2
90.00
I
D
(A), Peak Avalanche Current
80.00
70.00
60.00
50.00
40.00
30.00
20.00
0.000001
T
A
=150°C
T
A
=125°C
T
A
=25°C
10µs
T
A
=100°C
1000.0
100.0
R
DS(ON)
limited
10µs
100µs
1ms
T
J(Max)
=150°C
T
A
=25°C
0.1
1
10
I
D
(Amps)
10.0
1.0
0.1
0.0
10ms
100ms
10s
DC
100
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
(Note C)
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1000
T
A
=25°C
Power (W)
100
10
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4494L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
Z
θJA
Normalized Transient
Thermal Resistance
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=40°C/W
1
40
0.1
P
D
Single Pulse
T
on
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
0.01
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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