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“Standard”:
2.
3.
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7.
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(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
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DATA SHEET
COMPOUND TRANSISTOR
FP1 SERIES
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
FEATURES
• Up to 0.7 A current drive available
• On-chip bias resistor
• Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC Corporation
to know the specification of quality grade on the devices and its
recommended applications.
FP1 SERIES LISTS
Products
FP1A4A
FP1L2Q
FP1A3M
FP1F3P
FP1J3P
FP1L3N
FP1A4M
Marking
S30
S31
S32
S33
S36
S34
S35
R
1
(KΩ)
−
0.47
1.0
2.2
3.3
4.7
10
R
2
(KΩ)
10
4.7
1.0
10
10
10
10
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
T
j
T
stg
Ratings
−25
−25
−10
−0.7
−1.0
−20
200
150
−55
to +150
Unit
V
V
V
A
A
mA
mW
°C
°C
* PW
≤
10 ms, duty cycle
≤
50 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16181EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
Embedded System
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