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FS2KM-12A

Description
Power Field-Effect Transistor, 2A I(D), 600V, 6.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size61KB,4 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

FS2KM-12A Overview

Power Field-Effect Transistor, 2A I(D), 600V, 6.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN

FS2KM-12A Parametric

Parameter NameAttribute value
MakerMitsubishi
Parts packaging codeTO-220FN
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)2 A
Maximum drain current (ID)2 A
Maximum drain-source on-resistance6.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)25 W
Maximum pulsed drain current (IDM)6 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
MITSUBISHI Nch POWER MOSFET
MITSUBISHI Nch POWER MOSFET
FS2KM-12A
FS2KM-12A
HIGH-SPEED SWITCHING USE
HIGH-SPEED SWITCHING USE
FS2KM-12A
OUTLINE DRAWING
10
±
0.3
Dimensions in mm
2.8
±
0.2
15
±
0.3
φ
3.2
±
0.2
14
±
0.5
3.6
±
0.3
1.1
±
0.2
1.1
±
0.2
0.75
±
0.15
6.5
±
0.3
3
±
0.3
0.75
±
0.15
2.54
±
0.25
2.54
±
0.25
➀ ➁ ➂
2.6
±
0.2
G
10V DRIVE
G
V
DSS ...............................................................................
600V
G
r
DS (ON) (MAX) ................................................................
6.4Ω
G
I
D ...........................................................................................
2A
GATE
DRAIN
SOURCE
TO-220FN
APPLICATION
SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
P
D
T
ch
T
stg
V
iso
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
L = 200µH
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
600
±30
2
6
2
25
–55 ~ +150
–55 ~ +150
4.5
±
0.2
Unit
V
V
A
A
A
W
°C
°C
V
g
Sep. 2001
AC for 1minute, Terminal to case
Typical value
2000
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