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PC28F256P30TFE

Description
IC flash 256mbit 100ns 64easybga
Categorystorage   
File Size1MB,98 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Environmental Compliance  
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PC28F256P30TFE Overview

IC flash 256mbit 100ns 64easybga

256Mb and 512Mb (256Mb/256Mb), P30-65nm
Features
Micron Parallel NOR Flash Embedded
Memory (P30-65nm)
JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx,
RD48F4400P0VBQEx, RC48F4400P0VB0Ex,
PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx
Features
• High performance
– 100ns initial access for Easy BGA
– 110ns initial access for TSOP
– 25ns 16-word asychronous page read mode
– 52 MHz (Easy BGA) with zero WAIT states and
17ns clock-to-data output synchronous burst
read mode
– 4-, 8-, 16-, and continuous word options for burst
mode
– Buffered enhanced factory programming (BEFP)
at 2 MB/s (TYP) using a 512-word buffer
– 1.8V buffered programming at 1.14 MB/s (TYP)
using a 512-word buffer
• Architecture
– MLC: highest density at lowest cost
– Asymmetrically blocked architecture
– Four 32KB parameter blocks: top or bottom con-
figuration
– 128KB main blocks
– Blank check to verify an erased block
• Voltage and power
– V
CC
(core) voltage: 1.7V to 2.0V
– V
CCQ
(I/O) voltage: 1.7V to 3.6V
– Standy current: 65µA (TYP) for 256Mb
– 52 MHz continuous synchronous read current:
21mA (TYP), 24mA (MAX)
• Security
– One-time programmable register: 64 OTP bits,
programmed with unique information from Mi-
cron; 2112 OTP bits available for customer pro-
gramming
– Absolute write protection: V
PP
= V
SS
– Power-transition erase/program lockout
– Individual zero-latency block locking
– Individual block lock-down
– Password access
• Software
25μs
(TYP) program suspend
25μs
(TYP) erase suspend
– Flash Data Integrator optimized
– Basic command set and extended function Inter-
face (EFI) command set compatible
– Common flash interface
• Density and Packaging
– 56-lead TSOP package (256Mb only)
– 64-ball Easy BGA package (256Mb, 512Mb)
– QUAD+ and SCSP packages (256Mb, 512Mb)
– 16-bit wide data bus
• Quality and reliabilty
– JESD47 compliant
– Operating temperature: –40°C to +85°C
– Minimum 100,000 ERASE cycles per block
– 65nm process technology
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. C 12/13 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2013 Micron Technology, Inc. All rights reserved.
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