MC74VHC1GU04
Single Unbuffered Inverter
The MC74VHC1GU04 is an advanced high speed CMOS
Unbuffered inverter fabricated with silicon gate CMOS technology.
This device consists of a single unbuffered inverter. In combination
with others, or in the MC74VHCU04 Hex Unbuffered Inverter, these
devices are well suited for use as oscillators, pulse shapers, and in
many other applications requiring a high−input impedance amplifier.
For digital applications, the MC74VHC1G04 or the MC74VHC04 are
recommended.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output.
The MC74VHC1GU04 input structure provides protection when
voltages up to 7 V are applied, regardless of the supply voltage. This
allows the MC74VHC1GU04 to be used to interface 5 V circuits to
3 V circuits.
Features
http://onsemi.com
MARKING
DIAGRAMS
5
1
SC−88A/SOT−353/SC−70
DF SUFFIX
CASE 419A
5
V6 M
G
G
M
1
•
•
•
•
•
•
•
High Speed: t
PD
= 2.5 ns (Typ) at V
CC
= 5 V
Low Power Dissipation: I
CC
= 1
mA
(Max) at T
A
= 25°C
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Pin and Function Compatible with Other Standard Logic Families
Chip Complexity: FETs = 105
Pb−Free Packages are Available
5
5
1
TSOP−5/SOT−23/SC−59
DT SUFFIX
CASE 483
V6
M
G
1
V6 M
G
G
= Device Code
= Date Code*
= Pb−Free Package
NC
1
5
V
CC
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
IN A
2
1
2
PIN ASSIGNMENT
NC
IN A
GND
OUT Y
V
CC
GND
3
4
OUT Y
3
4
Figure 1. Pinout
5
FUNCTION TABLE
IN A
1
OUT Y
A Input
L
H
Y Output
H
L
Figure 2. Logic Symbol
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
©
Semiconductor Components Industries, LLC, 2007
1
February, 2007 − Rev. 16
Publication Order Number:
MC74VHC1GU04/D
MC74VHC1GU04
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
T
STG
T
L
T
J
q
JA
P
D
MSL
F
R
V
ESD
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Sink Current
DC Supply Current per Supply Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance
Power Dissipation in Still Air at 85°C
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
Oxygen Index: 28 to 34
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
Above V
CC
and Below GND at 125°C (Note 5)
SC70−5/SC−88A (Note 1)
TSOP−5
SC70−5/SC−88A
TSOP−5
Parameter
Value
*0.5
to
)7.0
−0.5 to +7.0
*0.5
to V
CC
)0.5
−20
$20
$12.5
$25
*65
to
)150
260
)150
350
230
150
200
Level 1
UL 94 V−0 @ 0.125 in
u1500
u200
N/A
$500
V
Unit
V
V
V
mA
mA
mA
mA
°C
°C
°C
°C/W
mW
I
LATCHUP
Latchup Performance
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
OUT
T
A
t
r
, t
f
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
V
CC
= 3.3 V
±
0.3 V
V
CC
= 5.0 V
±
0.5 V
Parameter
Min
2.0
0.0
0.0
*55
0
0
Max
5.5
5.5
V
CC
)125
100
20
Unit
V
V
V
°C
ns/V
Device Junction Temperature versus
Time to 0.1% Bond Failures
Junction
Temperature
5C
80
90
100
110
120
130
140
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
NORMALIZED FAILURE RATE
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
TJ = 130
°
C
TJ = 120
°
C
TJ = 100
°
C
TJ = 110
°
C
TJ = 80
°
C
100
TJ = 90
°
C
1
1
10
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
http://onsemi.com
2
MC74VHC1GU04
DC ELECTRICAL CHARACTERISTICS
V
CC
Symbol
V
IH
Parameter
Minimum High−Level
Input Voltage
Test Conditions
(V)
2.0
3.0
4.5
5.5
2.0
3.0
4.5
5.5
V
IN
= V
IH
or V
IL
I
OH
= −50
mA
V
IN
= V
IH
or V
IL
I
OH
= −4 mA
I
OH
= −8 mA
V
OL
Maximum Low−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OL
= 50
mA
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
I
OL
= 8 mA
I
IN
I
CC
Maximum Input
Leakage Current
Maximum Quiescent
Supply Current
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
0 to
5.5
5.5
1.9
2.9
4.4
2.58
3.94
0.0
0.0
0.0
0.1
0.1
0.1
0.36
0.36
±0.1
1.0
2.0
3.0
4.5
Min
1.7
2.4
3.6
4.4
0.3
0.6
0.9
1.1
1.9
2.9
4.4
2.48
3.80
0.1
0.1
0.1
0.44
0.44
±1.0
20
T
A
= 25°C
Typ
Max
T
A
≤
85°C
Min
1.7
2.4
3.6
4.4
0.3
0.6
0.9
1.1
1.9
2.9
4.4
2.34
3.66
0.1
0.1
0.1
0.52
0.52
±1.0
40
mA
mA
V
Max
−55
≤
T
A
≤
125°C
Min
1.7
2.4
3.6
4.4
0.3
0.6
0.9
1.1
Max
Unit
V
V
IL
Maximum Low−Level
Input Voltage
V
V
OH
Minimum High−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
V
V
ÎÎ Î Î Î Î Î Î Î
Î Î Î Î Î Î Î Î
Î
Î
Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î Î Î Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
Î
Î Î Î Î Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î Î Î Î
Î Î Î Î Î Î Î
Î Î Î Î Î
Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î Î Î Î
Î
Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
Î
Î Î Î Î Î Î Î Î Î Î Î Î Î Î ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS
Input t
r
= t
f
= 3.0 ns
Symbol
t
PLH
,
t
PHL
Parameter
Test Conditions
T
A
= 25°C
Typ
3.5
4.8
2.5
3.8
4
T
A
≤
85°C
−55
≤
T
A
≤
125°C
Min
Max
Min
Max
8.9
11.4
5.5
7.0
10
Min
Max
Unit
ns
Maximum Propagation
Delay, Input A to Y
V
CC
= 3.3
±
0.3 V C
L
= 15 pF
C
L
= 50 pF
V
CC
= 5.0
±
0.5 V C
L
= 15 pF
C
L
= 50 pF
10.5
13.0
6.5
8.0
10
12.0
15.5
8.0
9.5
10
C
IN
Maximum Input
Capacitance
pF
Typical @ 25°C, V
CC
= 5.0V
22
C
PD
Power Dissipation Capacitance (Note 6)
pF
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD
V
CC2
f
in
+ I
CC
V
CC
.
http://onsemi.com
3
MC74VHC1GU04
A
V
CC
50% V
CC
GND
t
PHL
t
PLH
V
OH
Y
50% V
CC
V
OL
Figure 4. Switching Waveforms
INPUT
C
L*
OUTPUT
*Includes all probe and jig capacitance.
A 1−MHz square input wave is recommended for propagation delay tests.
Figure 5. Test Circuit
ORDERING INFORMATION
Device
MC74VHC1GU04DFT1
M74VHC1GU04DFT1G
MC74VHC1GU04DFT2
M74VHC1GU04DFT2G
MC74VHC1GU04DTT1
M74VHC1GU04DTT1G
Package
SC70−5/SC−88A/SOT−353
SC70−5/SC−88A/SOT−353
(Pb−Free)
SC70−5/SC−88A/SOT−353
SC70−5/SC−88A/SOT−353
(Pb−Free)
TSOP−5/SOT23−5/SC59−5
TSOP−5/SOT23−5/SC59−5
(Pb−Free)
3000 / Tape & Reel
Shipping
†
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
4
MC74VHC1GU04
PACKAGE DIMENSIONS
SC−88A, SOT−353, SC−70
CASE 419A−02
ISSUE J
A
G
5
4
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
S
1
2
3
−B−
DIM
A
B
C
D
G
H
J
K
N
S
D
5 PL
0.2 (0.008)
M
B
M
N
J
C
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
−−−
0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
H
K
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
mm
inches
1.9
0.0748
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
京公网安备 11010802033920号
EEWORLD
