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20ETF02FP

Description
20 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC
CategoryDiscrete semiconductor    diode   
File Size130KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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20ETF02FP Overview

20 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC

20ETF02FP Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionR-PSFM-T2
Reach Compliance Codecompliant
applicationFAST RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.67 V
JESD-30 codeR-PSFM-T2
JESD-609 codee0
Maximum non-repetitive peak forward current260 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current20 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.16 µs
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Bulletin I2119 rev. C 03/99
QUIET
IR
Series
20ETF..FP
FAST SOFT RECOVERY
RECTIFIER DIODE
TO-220 FULLPAK
Description/Features
The 20ETF.. FP soft recovery
QUIET
IR
rectifier
series has been optimized for combined short
reverse recovery time and low forward voltage
drop.
The glass passivation ensures stable reliable
operation in the most severe temperature and
power cycling conditions.
Typical applications are:
output rectification and freewheeling in
inverters, choppers and converters
and input rectifications where severe
restrictions on conducted EMI should be met
fully isolated package (V
INS
= 2500 V
RMS
)
UL E78996 approved
V
F
< 1.2V @ 10A
I
FSM
= 300A
V
RRM
200 to 600V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Sinusoidal waveform
V
RRM
I
FSM
V
F
trr
T
J
@ 10 A, T
J
= 25°C
@ 1A, 100A/µs
Package Outline
20ETF..FP Units
20
200 to 600
300
1.2
60
- 40 to 150
A
V
A
V
ns
TO-220 FULLPAK
°C
www.irf.com
1

20ETF02FP Related Products

20ETF02FP 20ETF04FP 20ETF06FP
Description 20 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC 20 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC 20 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
Is it Rohs certified? incompatible incompatible incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction R-PSFM-T2 R-PSFM-T2 R-PSFM-T2
Reach Compliance Code compliant compliant compliant
application FAST RECOVERY FAST RECOVERY FAST RECOVERY
Shell connection CATHODE CATHODE CATHODE
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.67 V 1.67 V 1.67 V
JESD-30 code R-PSFM-T2 R-PSFM-T2 R-PSFM-T2
JESD-609 code e0 e0 e0
Maximum non-repetitive peak forward current 260 A 260 A 260 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C
Maximum output current 20 A 20 A 20 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 200 V 400 V 600 V
Maximum reverse recovery time 0.16 µs 0.16 µs 0.16 µs
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 -
ECCN code - EAR99 EAR99
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