FDDS10H04A_F085A Smart High Side Switch
April 2012
FDDS10H04A_F085A
Features
• Short circuit protection with latch
• Current limitation
• Overlaod protection
• Thermal shutdown with restart.
• Overvoltage protection(including load dump)
• Loss of ground protection
Smart High Side Switch
Description
N channel power FET with charge pump, current controlled
input and diagnostic feedbcak with load current sense, inte-
grated in smart Trench chip on chip technology. Provides
embedded protective functions.
TO252-5L
3
1
5
• Loss of supply protection( with external diode for charged
inductive load)
• Very low standby current
• Fast demagnetization of inductive loads
• ESD protection
• Optimized static electromagnetic compatibility
• Diagnostic function - Proportional load current sense(with
defined fault signal in case of overload operation, overtem-
perature shutdown and/or short circuit shutdown)
• Qualified to AEC
Typical Applications
• Power switch with current sense diagnostic feedback for DC
ground loads
• All types of resistive, inductive, and capacitive loads
• Replace electromechanical relays, fuses and discrete circuits
Ordering Information
Part Number
FDDS10H04A_F085A
Package
TO252-5L
Operating
Temperature
-40
C
- 150
C
Eco Status
RoHS
Packing Method
Tape & Reel
For Fairchild’s definition of “green” Eco Status, please visit:
http://www.fairchildsemi.com/company/green/rohs_green.html.
©2011 Fairchild Semiconductor Corporation
1
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FDDS10H04A_F085A Rev. 1.0.0
FDDS10H04A_F085A Smart High Side Switch
Block Diagrams
R
bb
Vbb
3
Charge
Pump
Current
Limit
Gate
Protection
Voltage
Source
High-side Driver
OUT
1
5
SCIS
Overload
Detection
Output Voltage
Detection
Input / Output
IN ESD & OVP
2
Protection
IS
4
UVLO
&
Control
Logic
Temp.
Sense
Current
Sense
Pin Definitions
Pin Number
1
2
3
4
Pin Name
OUT
IN
Vbb
IS
I/O
A
A
P
A
Pin Function Description
Output to loads; Pin1and 5 must be externally shorted
Input: activates the power switch if shorted to ground
Supply voltage; Pin3 and TAB are internally shorted
Sense output ; Diagnostic feedback; Provides at normal operation a sense
current proportion to the load current; in case of overload, over tempera-
ture and/or short circuit a defined current is provided
Output to loads; Pin1 and 5 must be externally shorted
5
OUT
A
©2011 Fairchild Semiconductor Corporation
FDDS10H04A_F085A Rev. 1.0.0
2
www.fairchildsemi.com
FDDS10H04A_F085A Smart High Side Switch
Absolute Maximum Ratings
At Tj=25C unless otherwise specified.
Parameter
Supply voltage
4)
Symbol
V
bb
V
bb
V
LoadDump
I
L
T
j
T
stg
P
tot
E
AS
IS
IN
VBB, Output
V
ESD
V
ESD
V
ESD
I
IN
I
IS
2)
Values
38
30
45
Self-limited
-40 ~ 150
-55 ~ 150
59
288
2.8
3
5
+15, -120
+15, -120
self-limited
20
Unit
V
V
V
V
C
C
W
mJ
KV
KV
KV
mA
V/us
Supply voltage for full short circuit protection
1)
Load dump protection V
LoadDump
= U
A
+ V
S
, U
A
=13.5V
R
I
=2, R
L
=1, t
d
=400ms, IN=Low o rHigh
Load current (Short-circuit current)
Operating temperature range
Storage temperature range
Power Dissipation(DC)
Inductive load switch-off energy dissipation
3)
Single pulse, I
L
=10.7A, L=5mH, V
bb
=12V, T
j
=150C
Electrostatic discharge capability (ESD)
(Human Body Model)
Current through input pin(DC)
Current through current sense pin(DC)
Input voltage slew rate Vbb <= 16V
Input voltage slew rate Vbb > 16V
4)
Note:
dV
bIN
/ d
t
1) Short circuit is defined as a combination of remaining resistances and inductances. See schematic on page11.
2) VLoad dump is setup without the DUT connected to the generator
3) See also diagram on page 11.
4) See also on page 7. Slew rate limitation can be achieved by means of using a series resistor RIN in the input path. This resistor is also required for reverse operation. See also
page 10.
©2011 Fairchild Semiconductor Corporation
FDDS10H04A_F085A Rev. 1.0.0
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FDDS10H04A_F085A Smart High Side Switch
Electrical Characteristics
At Tj=25C, V
bb
=12V unless otherwise specified.
Parameter
Theramal Characteristics
Thermal resistance
Symbol
R
thJC
5)
R
thJA
Conditions
(junction to case)
(junction to ambient)
device on PCB
6)
, SMD version only
V
IN
=0, Vbb=5.5V, I
L
=7.5A, Tj=25C
V
IN
=0, Vbb=5.5V, I
L
=7.5A, Tj=150C
V
IN
=0, Vbb=12V, I
L
=7.5A Tj=25C
V
IN
=0, Vbb=12V, I
L
=7.5A Tj=150C
Tj=-40 ~ 150C
ISO Proposal
6)
:V
ON
<=0.5V, T
C
=85C,
T
j
<=150C
6) 7)
: VON<= 0.5V,
SMD
T
a
=85C, T
j
<=150C
R
L
=2.2T
j
= -40~ 150C
R
L
=2.2T
j
= -40~ 150C
R
L
=2.2T
j
= -40~ 150C
Min. Typ. Max. Unit
-
-
-
-
-
83
45
4.5
12
4.5
12
35
41
12
160
110
0.2
0.3
1.0
-
55
10
16
10
16
65
-
-
400
400
0.5
0.65
us
V/us
V/us
K/W
Load Switching Capability and Characteristics
On-state resistance(Pin3 to pin 1,5)
R
ON
m
Output voltage drop limitation at small
load currents( tab to pin 1,5)
Nominal load current( tab to pin1,5)
V
ON(NL)
I
L(ISO)
I
L(NOM)
-
33
10.5
-
-
-
-
mV
A
Turn-on time ( to 90% V
OUT)
Turn-off time ( to 10% V
OUT)
Slew rate on (25% to 50% V
OUT
)
Slew rate off (50% to 25% V
OUT
)
t
on
t
off
dV / dt
on
-dV / dt
off
Operating Parameters
Operating Voltage(VIN=0)
Under voltage shutdown
Over voltage protection
Standby current
9)
7) 8)
V
bb(ON)
V
bIN(u)
V
bb(ucp)
V
Z,IN
I
bb(off)
T
j
= -40~ 150C
5.5
-
1.5
3.7
47.3
0.8
8
38
3.5
5.5
-
5.3
20
V
V
V
V
uA
Under voltage restart of charge pump
I
bb
=15mA, T
j
= -40~ 150C
I
IN
=0, T
j
= -40~ 120C
I
IN
=0, T
j
= 150C
42.5
-
-
Reverse Battery
10)
Reverse battery voltage
On-state resistance(Tab to pin 1,5)
8)
-V
bb
R
ON(REV
)
Vbb=-8V, V
IN
=0, I
L
=-7.5A, R
IS
=1KT
j
=25C
Vbb=-8V,V
IN
=0,I
L
=-7.5A,R
IS
=1KT
j
=150C
Vbb=-12V,V
IN
=0,I
L
=-7.5A,R
IS
=1KT
j
=25C
Vbb=-12V,V
IN
=0,I
L
=-7.5A,R
IS
=1KT
j
=150C
Is=1mA, VIN=5V @125C
-
-
-
-
-
65
-
9.5
15
5.5
12
95
18
13
22
10
16
125
V
m
Integrated resistor in V
bb
line
R
bb
Inverse operation
11)
Ouptut voltage drop( pin4 to pin 1, 5)
8)
Turn-on delay after inverse operation;
Note:
5) Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
6) Device on76.2mm * 114mm * 1.57mm glass epoxyPCB. still air condition.
7) Not subject to production test, Parameters are calculated from Ron and Rthjc or Rthja.
8) not subject to production test, specified by design
9) See also VON(CL) in circuit diagram page 8.
10) For operation at voltages higher then |16V| please see required schematic on page 9.
11) Permanent Inverse operation results eventually in a current flow via the intrinsic diode of the power DMOS. In this case the device switches on with a time delay td(inv)) after-
the transition from inverse to forward mode.
-V
ON(inv)
t
d(inv)
I
L
=-10A,R
IS
=1KT
j
=25C
I
L
=-10A,R
IS
=1KT
j
=150C
I
L
> 0A
8)
V
IN(inv
)=V
IN(fwd)
= 0V
-
-
-
800
600
1
-
-
-
mV
ms
©2011 Fairchild Semiconductor Corporation
FDDS10H04A_F085A Rev. 1.0.0
4
www.fairchildsemi.com
FDDS10H04A_F085A Smart High Side Switch
Electrical Characteristics
At Tj=25C, V
bb
=12V unless otherwise specified
Parameter
Protection Functions
12)
Short circuit current limit (pin4 and tab
to pin 1,5 at V
ON
=6V
13) 14)
Short circuit current limit (pin4 and tab
to pin 1,5 at V
ON
=12V
13)
Short circuit current limit (pin4 and tab
to pin 1,5 at V
ON
=18V
13) 14)
Short circuit current limit (pin4 and tab
to pin 1,5 at V
ON
=24V
13)
Short circuit current limit (pin4 and tab
to pin 1,5 at V
ON
=30V
13) 14)
Short circuit shutddown detection volt-
age
Short circuit shutdown delay after input
current positive slop
Min value valid only if “off-signal” time exceeds 30us
Symbol
I
L6(SC)
Conditions
T
j
=-40C
T
j
=25C
T
j
=150C
T
j
=-40C
T
j
=25C
T
j
=150C
T
j
=-40C
T
j
=25C
T
j
=150C
T
j
=-40C
T
j
=25C
T
j
=150C
T
j
=-40C
T
j
=25C
T
j
=150C
Min. Typ. Max. Unit
-
-
65
-
-
40
-
-
33
-
-
18
-
-
7
2.5
100
90
80
80
70
60
63
55
47
43
38
33
25
24
23
3.5
450
130
-
-
120
-
-
81
-
-
65
-
50
--
4.5
650
A
I
L12(SC)
A
I
L18(SC)
A
I
L24(SC)
A
I
L30(SC)
A
V
ON(SC)
t
d(SC1)
V
ON
> V
ON(SC)
, T
j
=-40 ~ 150C
V
us
250
Output clamp(inductive load switch off)
at V
OUT
= Vbb-V
ON(CL)
(overvoltage)
15)
Thermal overload trip temperature
Thermal hysteresis
notes:
V
ON(CL)
T
jt
T
jt
I
L
=40mA
38.5
150
-
42
175
10
-
-
-
V
C
K
12) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal
operating range. Protection functions are not designed for continuous repetitive operation.
13) Short circuit current limit for max. duration of td(SC1) , prior to shutdown, see also figures 3b on page 15.
14) not subject to production test, specified by design
15) See also figure 2b on page 14.
©2011 Fairchild Semiconductor Corporation
FDDS10H04A_F085A Rev. 1.0.0
5
www.fairchildsemi.com
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