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FQD45N03LTF

Description
Power Field-Effect Transistor, 30A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size214KB,11 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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FQD45N03LTF Overview

Power Field-Effect Transistor, 30A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

FQD45N03LTF Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeTO-252
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)200 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)30 A
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.031 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2.5 W
Maximum pulsed drain current (IDM)120 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn85Pb15)
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
FQD45N03L
March 2004
FQD45N03L
N-Channel Logic Level PWM Optimized Power MOSFET
General Description
This device employs a new advanced MOSFET technology
and features low gate charge while maintaining low on-
resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Features
• Fast switching
• r
DS(ON)
= 0.018Ω (Typ), V
GS
= 10V
• r
DS(ON)
= 0.028Ω (Typ), V
GS
= 5V
• Q
g
(Typ) = 9nC, V
GS
= 5V
• Q
gd
(Typ) =3nC
• C
ISS
(Typ) =970pF
Applications
• DC/DC converters
D
DRAIN (FLANGE)
GATE
SOURCE
G
TO-252
MOSFET Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
DSS
V
GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
I
D
Continuous (T
C
=
Continuous (T
C
=
Pulsed
P
D
T
J
, T
STG
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
100
o
C,
25
o
C,
V
GS
= 4.5V)
R
θJA
=52
o
C)
V
GS
= 10V,
20
20
8
Figure 4
41
0.33
-55 to 150
Ratings
30
±20
S
Units
V
V
A
A
A
A
W
W/
o
C
o
C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
3
100
52
o
C/W
C/W
o
C/W
o
Package Marking and Ordering Information
Device Marking
FQD45N03L
Device
FQD45N03L
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
©2004 Fairchild Semiconductor Corporation
FQD45N03L Rev. B1
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