Voltage Regulators
AN80xx/AN80xxM Series
3-pin, positive output, low dropout voltage regulator (50 mA type)
I
Overview
The AN80xx series and the AN80xxM series are 3-
pin, low dropout, fixed positive output type monolithic
voltage regulators. Since their power consumption can
be minimized, they are suitable for battery-used power
supply and reference voltage. 13 types of output voltage
are available; 2V, 2.5V, 3V, 3.5V (SSIP003-P-0000 only),
4V, 4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V, and 10V.
AN80xx series
5.0±0.2
5.1±0.2
Unit: mm
4.0±0.2
(1.0)
2.3±0.2
0.6±0.15
(1.0)
13.5±0.5
I
Features
•
Input/output voltage difference: 0.3V max.
•
Output current of up to 50mA
•
Low bias current: 0.6mA typ.
•
Output voltage: 2V, 2.5V, 3V, 3.5V (SSIP003-P-0000
only), 4V, 4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V, and 10V
•
Built-in overcurrent protection circuit
0.43
+0.1
–0.05
2.54
0.43
+0.1
–0.05
2 3 1
1: Input
2: Output
3: GND
SSIP003-P-0000
AN80xxM series
4.6 max.
1.8 max.
Unit: mm
1.6 max.
2.6 typ.
0.48 max.
1.5
3.0
0.58 max.
1.5
0.8 min.
4.25 max.
2.6 max.
0.44 max.
3
2
1
1: Output
2: GND
3: Input
HSIP003-P-0000B
Note) The packages (SSIP003-P-0000 and HSIP003-
P-0000B) of this product will be changed to
lead-free type (SSIP003-P-0000S and
HSIP003-P-0000Q). See the new package di-
mensions section later of this datasheet.
+
Error
Amp.
−
Current
Limiter
I
Block Diagram
(AN80xxM series)
Starter
Voltage
Reference
R
2
R
1
3
V
I
(1)
C
IN
2
(3)
−
1
+
(2)
V
O
R
1
=
5kΩ
C
IN
=
0.33µF
C
OUT
=
10µF
C
OUT
Note) The number in ( ) shows the pin number for the AN80xx series.
Publication date: December 2001
SFF00007CEB
1
AN80xx/AN80xxM Series
I
Absolute Maximum Ratings at T
a
=
25°C
Parameter
Supply voltage
Supply current
Power dissipation
Operating ambient temperature
Storage temperature
*
AN80xx series
AN80xxM series
Symbol
V
I
I
CC
P
D
T
opr
T
stg
Rating
20
100
650 *
−30
to
+80
−55
to
+150
−55
to
+125
Unit
V
mA
mW
°C
°C
AN80xxM series is mounted on standard board (glass epoxy: 20mm
×
20mm
×
t1.7mm with Cu foil of 1cm
2
or more).
I
Electrical Characteristics at T
a
=
25°C
•
AN8002, AN8002M (2V type)
Parameter
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
Symbol
V
O
REG
IN
REG
L
V
DIF(min)
I
Bias
RR
V
no
∆V
O
/T
a
T
j
=
25°C
V
I
=
2.5 to 8V, T
j
=
25°C
I
O
=
1 to 40mA, T
j
=
25°C
I
O
=
1 to 50mA, T
j
=
25°C
V
I
=
1.9V, I
O
=
20mA, T
j
=
25°C
V
I
=
1.9V, I
O
=
50mA, T
j
=
25°C
I
O
=
0mA, T
j
=
25°C
V
I
=
3 to 5V, f
=
120Hz
f
=
10Hz to 100kHz
T
j
= −30
to
+125°C
62
Conditions
Min
1.92
Typ
2
2
7
10
0.06
0.12
0.6
74
60
0.1
Max
2.08
40
20
25
0.2
0.3
1
Unit
V
mV
mV
mV
V
V
mA
dB
µV
mV/°C
Note 1) The specified condition T
j
=
25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
I
=
3V, I
O
=
20mA and C
O
=
10µF.
•
AN8025, AN8025M (2.5V type)
Parameter
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
Symbol
V
O
REG
IN
REG
L
V
DIF(min)
I
Bias
RR
V
no
∆V
O
/T
a
T
j
=
25°C
V
I
=
3 to 8.5V, T
j
=
25°C
I
O
=
1 to 40mA, T
j
=
25°C
I
O
=
1 to 50mA, T
j
=
25°C
V
I
=
2.4V, I
O
=
20mA, T
j
=
25°C
V
I
=
2.4V, I
O
=
50mA, T
j
=
25°C
I
O
=
0mA, T
j
=
25°C
V
I
=
3.5 to 5.5V, f
=
120Hz
f
=
10Hz to 100kHz
T
j
= −30
to
+125°C
60
Conditions
Min
2.4
Typ
2.5
2.5
8
12.5
0.07
0.12
0.6
72
65
0.13
Max
2.6
50
20
25
0.2
0.3
1
Unit
V
mV
mV
mV
V
V
mA
dB
µV
mV/°C
Note 1) The specified condition T
j
=
25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
I
=
3.5V, I
O
=
20mA and C
O
=
10µF.
2
SFF00007CEB
AN80xx/AN80xxM Series
I
Electrical Characteristics at T
a
=
25°C (continued)
•
AN8003, AN8003M (3V type)
Parameter
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
Symbol
V
O
REG
IN
REG
L
V
DIF(min)
I
Bias
RR
V
no
∆V
O
/T
a
T
j
=
25°C
V
I
=
3.5 to 9V, T
j
=
25°C
I
O
=
1 to 40mA, T
j
=
25°C
I
O
=
1 to 50mA, T
j
=
25°C
V
I
=
2.9V, I
O
=
20mA, T
j
=
25°C
V
I
=
2.9V, I
O
=
50mA, T
j
=
25°C
I
O
=
0mA, T
j
=
25°C
V
I
=
4 to 6V, f
=
120Hz
f
=
10Hz to 100kHz
T
j
= −30
to
+125°C
58
Conditions
Min
2.88
Typ
3
3
9
15
0.07
0.12
0.6
70
70
0.15
Max
3.12
50
25
30
0.2
0.3
1
Unit
V
mV
mV
mV
V
V
mA
dB
µV
mV/°C
Note 1) The specified condition T
j
=
25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
I
=
4V, I
O
=
20mA and C
O
=
10µF.
•
AN8035(3.5V type)
yp
Parameter
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
Symbol
V
O
REG
IN
REG
L
V
DIF(min)
I
Bias
RR
V
no
∆V
O
/T
a
T
j
=
25°C
V
I
=
4 to 9.5V, T
j
=
25°C
I
O
=
1 to 40mA, T
j
=
25°C
I
O
=
1 to 50mA, T
j
=
25°C
V
I
=
3.4V, I
O
=
20mA, T
j
=
25°C
V
I
=
3.4V, I
O
=
50mA, T
j
=
25°C
I
O
=
0mA, T
j
=
25°C
V
I
=
4.5 to 6.5V, f
=
120Hz
f
=
10Hz to 100kHz
T
j
= −30
to
+125°C
57
Conditions
Min
3.36
Typ
3.5
3.5
10
20
0.07
0.12
0.6
69
75
0.2
Max
3.64
50
30
40
0.2
0.3
1
Unit
V
mV
mV
mV
V
V
mA
dB
µV
mV/°C
Note 1) The specified condition T
j
=
25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
I
=
4.5V, I
O
=
20mA and C
O
=
10µF.
•
AN8004, AN8004M (4V type)
Parameter
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
Symbol
V
O
REG
IN
REG
L
V
DIF(min)
I
Bias
RR
V
no
∆V
O
/T
a
T
j
=
25°C
V
I
=
4.5 to 10V, T
j
=
25°C
I
O
=
1 to 40mA, T
j
=
25°C
I
O
=
1 to 50mA, T
j
=
25°C
V
I
=
3.8V, I
O
=
20mA, T
j
=
25°C
V
I
=
3.8V, I
O
=
50mA, T
j
=
25°C
I
O
=
0mA, T
j
=
25°C
V
I
=
5 to 7V, f
=
120Hz
f
=
10Hz to 100kHz
T
j
= −30
to
+125°C
56
Conditions
Min
3.84
Typ
4
3.5
10
20
0.07
0.12
0.6
67
80
0.2
Max
4.16
50
30
40
0.2
0.3
1
Unit
V
mV
mV
mV
V
V
mA
dB
µV
mV/°C
Note 1) The specified condition T
j
=
25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
I
=
5V, I
O
=
20mA and C
O
=
10µF.
SFF00007CEB
3
AN80xx/AN80xxM Series
I
Electrical Characteristics at T
a
=
25°C (continued)
•
AN8045, AN8045M (4.5V type)
Parameter
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
Symbol
V
O
REG
IN
REG
L
V
DIF(min)
I
Bias
RR
V
no
∆V
O
/T
a
T
j
=
25°C
V
I
=
5 to 10.5V, T
j
=
25°C
I
O
=
1 to 40mA, T
j
=
25°C
I
O
=
1 to 50mA, T
j
=
25°C
V
I
=
4.3V, I
O
=
20mA, T
j
=
25°C
V
I
=
4.3V, I
O
=
50mA, T
j
=
25°C
I
O
=
0mA, T
j
=
25°C
V
I
=
5.5 to 7.5V, f
=
120Hz
f
=
10Hz to 100kHz
T
j
= −30
to
+125°C
54
Conditions
Min
4.32
Typ
4.5
4
11
23
0.07
0.12
0.7
66
85
0.23
Max
4.68
50
35
45
0.2
0.3
1
Unit
V
mV
mV
mV
V
V
mA
dB
µV
mV/°C
Note 1) The specified condition T
j
=
25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
I
=
5.5V, I
O
=
20mA and C
O
=
10µF.
•
AN8005, AN8005M (5V type)
Parameter
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
Symbol
V
O
REG
IN
REG
L
V
DIF(min)
I
Bias
RR
V
no
∆V
O
/T
a
T
j
=
25°C
V
I
=
5.5 to 11V, T
j
=
25°C
I
O
=
1 to 40mA, T
j
=
25°C
I
O
=
1 to 50mA, T
j
=
25°C
V
I
=
4.8V, I
O
=
20mA, T
j
=
25°C
V
I
=
4.8V, I
O
=
50mA, T
j
=
25°C
I
O
=
0mA, T
j
=
25°C
V
I
=
6 to 8V, f
=
120Hz
f
=
10Hz to 100kHz
T
j
= −30
to
+125°C
52
Conditions
Min
4.8
Typ
5
4.5
12
25
0.07
0.12
0.7
64
95
0.25
Max
5.2
50
40
50
0.2
0.3
1
Unit
V
mV
mV
mV
V
V
mA
dB
µV
mV/°C
Note 1) The specified condition T
j
=
25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
I
=
6V, I
O
=
20mA and C
O
=
10µF.
•
AN8006, AN8006M (6V type)
Parameter
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
Symbol
V
O
REG
IN
REG
L
V
DIF(min)
I
Bias
RR
V
no
∆V
O
/T
a
T
j
=
25°C
V
I
=
6.5 to 12V, T
j
=
25°C
I
O
=
1 to 40mA, T
j
=
25°C
I
O
=
1 to 50mA, T
j
=
25°C
V
I
=
5.8V, I
O
=
20mA, T
j
=
25°C
V
I
=
5.8V, I
O
=
50mA, T
j
=
25°C
I
O
=
0mA, T
j
=
25°C
V
I
=
7 to 9V, f
=
120Hz
f
=
10Hz to 100kHz
T
j
= −30
to
+125°C
51
Conditions
Min
5.76
Typ
6
5.5
13
28
0.07
0.13
0.7
63
105
0.3
Max
6.24
60
45
55
0.2
0.3
1.2
Unit
V
mV
mV
mV
V
V
mA
dB
µV
mV/°C
Note 1) The specified condition T
j
=
25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
I
=
7V, I
O
=
20mA and C
O
=
10µF.
4
SFF00007CEB
AN80xx/AN80xxM Series
I
Electrical Characteristics at T
a
=
25°C (continued)
•
AN8007, AN8007M (7V type)
Parameter
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
Symbol
V
O
REG
IN
REG
L
V
DIF(min)
I
Bias
RR
V
no
∆V
O
/T
a
T
j
=
25°C
V
I
=
7.5 to 13V, T
j
=
25°C
I
O
=
1 to 40mA, T
j
=
25°C
I
O
=
1 to 50mA, T
j
=
25°C
V
I
=
6.8V, I
O
=
20mA, T
j
=
25°C
V
I
=
6.8V, I
O
=
50mA, T
j
=
25°C
I
O
=
0mA, T
j
=
25°C
V
I
=
8 to 10V, f
=
120Hz
f
=
10Hz to 100kHz
T
j
= −30
to
+125°C
50
Conditions
Min
6.72
Typ
7
6.5
14
31
0.07
0.13
0.7
62
120
0.35
Max
7.28
70
50
60
0.2
0.3
1.3
Unit
V
mV
mV
mV
V
V
mA
dB
µV
mV/°C
Note 1) The specified condition T
j
=
25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
I
=
8V, I
O
=
20mA and C
O
=
10µF.
•
AN8008, AN8008M (8V type)
yp
Parameter
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
Symbol
V
O
REG
IN
REG
L
V
DIF(min)
I
Bias
RR
V
no
∆V
O
/T
a
T
j
=
25°C
V
I
=
8.5 to 14V, T
j
=
25°C
I
O
=
1 to 40mA, T
j
=
25°C
I
O
=
1 to 50mA, T
j
=
25°C
V
I
=
7.8V, I
O
=
20mA, T
j
=
25°C
V
I
=
7.8V, I
O
=
50mA, T
j
=
25°C
I
O
=
0mA, T
j
=
25°C
V
I
=
9 to 11V, f
=
120Hz
f
=
10Hz to 100kHz
T
j
= −30
to
+125°C
49
Conditions
Min
7.68
Typ
8
7.5
15
34
0.07
0.14
0.7
61
135
0.4
Max
8.32
80
55
65
0.2
0.3
1.3
Unit
V
mV
mV
mV
V
V
mA
dB
µV
mV/°C
Note 1) The specified condition T
j
=
25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
I
=
9V, I
O
=
20mA and C
O
=
10µF.
•
AN8085, AN8085M
yp
(8.5V type)
Parameter
Output voltage
Line regulation
Load regulation
Minimum input/output voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
Symbol
V
O
REG
IN
REG
L
V
DIF(min)
I
Bias
RR
V
no
∆V
O
/T
a
T
j
=
25°C
V
I
=
9 to 14.5V, T
j
=
25°C
I
O
=
1 to 40mA, T
j
=
25°C
I
O
=
1 to 50mA, T
j
=
25°C
V
I
=
8.3V, I
O
=
20mA, T
j
=
25°C
V
I
=
8.3V, I
O
=
50mA, T
j
=
25°C
I
O
=
0mA, T
j
=
25°C
V
I
=
9.5 to 11.5V, f
=
120Hz
f
=
10Hz to 100kHz
T
j
= −30
to
+125°C
48
Conditions
Min
8.16
Typ
8.50
8.3
16
36
0.07
0.14
0.8
60
140
0.43
Max
8.84
90
60
70
0.2
0.3
1.4
Unit
V
mV
mV
mV
V
V
mA
dB
µV
mV/°C
Note 1) The specified condition T
j
=
25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
I
=
9.5V, I
O
=
20mA and C
O
=
10µF.
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