TS27M4C, TS27M4I, TS27M4M
Precision low power CMOS quad operational amplifiers
Features
■
■
■
■
■
Low power consumption: 150 µA/op
Output voltage can swing to ground
Excellent phase margin on capacitive loads
Unity gain stable
Two input offset voltage selections
DIP14
(Plastic package)
Description
These devices are low cost, low power quad
operational amplifiers designed to operate with
single or dual supplies. These operational
amplifiers use the ST silicon gate CMOS process
allowing an excellent consumption-speed ratio.
These series are ideally suited for low
consumption applications.
Three power consumptions are available thus
offering the best consumption-speed ratio for your
application:
■
■
■
SO14
(Plastic micropackage)
TSSOP14
(Thin shrink small outline package)
Pin connections
(top view)
ICC = 10 µA/amp: TS27L4 (very low power)
ICC = 150 µA/amp: TS27M4 (low power)
ICC = 1 mA/amp: TS274 (standard)
Output 1 1
Inverting Input 1 2
Non-inverting Input 1 3
V
CC
+ 4
Non-inverting Input 2 5
Inverting Input 2 6
Output 2 7
+
-
+
-
-
+
-
+
14 Output 4
13 Inverting Input 4
12 Non-inverting Input 4
11 V
CC
-
10 Non-inverting Input 3
9
8
Inverting Input 3
Output 3
These CMOS amplifiers offer very high input
impedance and extremely low input currents. The
major advantage versus JFET devices is the very
low input currents drift with temperature (see
Figure 4 on page 7).
September 2008
Rev 2
1/14
www.st.com
14
Circuit schematics
TS27M4C, TS27M4I, TS27M4M
1
Circuit schematics
Figure 1.
Block diagram
V
CC
Current
source
xI
Input
differential
Second
stage
Output
stage
Output
V
CC
E
E
2/14
Figure 2.
TS27M4C, TS27M4I, TS27M4M
V
CC
T
24
T
25
T
26
T
6
T
8
T
28
T
1
Input
R1
C1
Input
T
27
T
5
T
10
T
15
R
2
T
2
T
11
T
12
Schematic diagram (for 1/4 TS27M4)
T
17
T
18
T
7
T
23
T
3
Output
T
19
T
4
T
16
T
9
T
13
T
14
T
20
T
22
T
29
T
21
V
CC
Circuit schematics
3/14
Absolute maximum ratings and operating conditions
TS27M4C, TS27M4I, TS27M4M
2
Table 1.
Symbol
V
CC
+
V
id
V
in
I
o
I
in
T
oper
T
stg
Absolute maximum ratings and operating conditions
Absolute maximum ratings (AMR)
Parameter
Supply voltage
(1)
Differential input voltage
(2)
Input voltage
(3)
Output current for V
CC+
≥
15V
Input current
Operating free-air temperature range
Storage temperature range
Thermal resistance junction to ambient
(4)
SO-14
TSSOP14
DIP14
Thermal resistance junction to case
(4)
SO-14
TSSOP14
DIP14
HBM: human body model
(5)
ESD
MM: machine model
(6)
CDM: charged device model
(7)
0 to +70
TS27M4C/AC
TS27M4I/AI
18
±18
-0.3 to 18
±30
±5
-40 to +125
-65 to +150
105
100
80
31
32
33
1
100
1.5
-55 to +125
TS27M4M/AM
Unit
V
V
V
mA
mA
°C
°C
R
thja
°C/W
R
thjc
°C/W
kV
V
kV
1. All values, except differential voltage are with respect to network ground terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage.
4. Short-circuits can cause excessive heating and destructive dissipation. Values are typical.
5. Human body model: a 100 pF capacitor is charged to the specified voltage, then discharged through a 1.5kΩ resistor
between two pins of the device. This is done for all couples of connected pin combinations while the other pins are floating.
6. Machine model: a 200 pF capacitor is charged to the specified voltage, then discharged directly between two pins of the
device with no external series resistor (internal resistor < 5Ω). This is done for all couples of connected pin combinations
while the other pins are floating.
7. Charged device model: all pins and the package are charged together to the specified voltage and then discharged directly
to the ground through only one pin. This is done for all pins.
Table 2.
Symbol
V
CC+
V
icm
Operating conditions
Parameter
Supply voltage
Common mode input voltage range
Value
3 to 16
0 to V
CC+
- 1.5
Unit
V
V
4/14
TS27M4C, TS27M4I, TS27M4M
Electrical characteristics
3
Table 3.
Symbol
Electrical characteristics
V
CC+
= +10 V, V
CC-
= 0 V, T
amb
= +25° C (unless otherwise specified)
TS27M4C/AC
Parameter
Min. Typ.
Input offset voltage
V
O
= 1.4V, V
ic
= 0V
TS27M4C/I/M
TS27M4AC/AI/AM
T
min
≤
T
amb
≤
T
max
TS27M4C/I/M
TS27M4AC/AI/AM
Input offset voltage drift
Input offset current note
V
ic
= 5V, V
O
= 5V
T
min
≤
T
amb
≤
T
max
Input bias current
(1)
V
ic
= 5V, V
O
= 5V
T
min
≤
T
amb
≤
T
max
High level output voltage
V
id
= 100mV, R
L
= 100kΩ
T
min
≤
T
amb
≤
T
max
Low level output voltage
V
id
= -100mV
Large signal voltage gain
V
iC
= 5V, R
L
= 100kΩ, V
o
= 1V to 6V
T
min
≤
T
amb
≤
T
max
Gain bandwidth product
A
v
= 40dB, R
L
= 100kΩ, C
L
= 100pF, f
in
= 100kHz
Common mode rejection ratio
V
iC
= 1V to 7.4V, V
o
= 1.4V
Supply voltage rejection ratio
V
CC+
= 5V to 10V, V
o
= 1.4V
Supply current (per amplifier)
A
v
= 1, no load, V
o
= 5V
T
min
≤
T
amb
≤
T
max
Output short-circuit current
V
o
= 0V, V
id
= 100mV
Output sink current
V
o
= V
CC
, V
id
= -100mV
Slew rate at unity gain
R
L
= 100kΩ C
L
= 100pF, V
i
= 3 to 7V
,
65
60
30
20
50
8.7
8.6
(1)
TS27M4I/AI
TS27M4M/AM
Typ.
Max.
Unit
Max. Min.
V
io
1.1
0.9
10
5
12
6.5
1.1
0.9
10
5
12
6.5
mV
DV
io
I
io
2
1
100
1
150
8.9
8.7
8.5
50
2
1
200
1
300
8.9
µV/°C
pA
I
ib
pA
V
OH
V
V
OL
50
mV
A
vd
30
10
50
V/mV
GBP
CMR
SVR
1
80
80
65
60
1
80
80
MHz
dB
dB
I
CC
150
200
250
150
200
300
µA
I
o
I
sink
SR
60
45
0.6
60
45
0.6
mA
mA
V/µs
5/14
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