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M58WR032KL70ZA6U TR

Description
IC flash 32mbit 70ns 44vfbga
Categorystorage   
File Size2MB,125 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Environmental Compliance  
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M58WR032KL70ZA6U TR Overview

IC flash 32mbit 70ns 44vfbga

M58WR016KT M58WR032KT M58WR064KT
M58WR016KB M58WR032KB M58WR064KB
16-, 32-, 64-Mbit (×16, multiple bank, burst)
1.8 V supply Flash memories
Features
Supply voltage
– V
DD
= 1.7 V to 2 V for program, erase and
read
– V
DDQ
= 1.7 V to 2 V for I/O buffers
– V
PP
= 9 V for fast program
Synchronous/asynchronous read
– Synchronous burst read mode: 66 MHz
– Asynchronous/synchronous page read
mode
– Random access times: 70 ns
Synchronous burst read suspend
Programming time
– 10
μs
by word typical for fast factory
program
– Double/quadruple word program option
– Enhanced factory program options
Memory blocks
– Multiple bank memory array: 4 Mbit banks
– Parameter blocks (top or bottom location)
Dual operations
– Program erase in one bank while read in
others
– No delay between read and write
operations
Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked
– WP for block lock-down
Security
– 128-bit user programmable OTP cells
– 64-bit unique device number
Common Flash interface (CFI)
100 000 program/erase cycles per block
Electronic signature
– Manufacturer code: 20h
– Device codes:
M58WR016KT (top): 8812h
M58WR016KB (bottom): 8813h
– M58WR032KT (top): 8814h
M58WR032KB (bottom): 8815h
– M58WR064KT (top): 8810h
M58WR064KB (bottom): 8811h
RoHS package available
Automotive Certified Parts Available
VFBGA56 (ZB)
7.7 × 9 mm
FBGA
VFBGA88 (ZQ)
8 × 10 mm
April 2009
Rev 6
1/125
www.numonyx.com
1

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