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FX202-TL

Description
Power Field-Effect Transistor, 4A I(D), 20V, 0.9ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size69KB,1 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

FX202-TL Overview

Power Field-Effect Transistor, 4A I(D), 20V, 0.9ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET

FX202-TL Parametric

Parameter NameAttribute value
MakerSANYO
package instructionSMALL OUTLINE, R-PDSO-F5
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)4 A
Maximum drain-source on-resistance0.9 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F5
Number of terminals5
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Transistor component materialsSILICON
Base Number Matches1
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