BC546xBK ... BC549xBK
BC546xBK ... BC549xBK
NPN
Version 2009-12-03
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
NPN
500 mW
TO-92
(10D3)
0.18 g
4.6
4.6
±0.1
±0.1
CBE
min 12.5
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Special packaging bulk
Sonder-Lieferform Schüttgut
2 x 1.27
Dimensions - Maße [mm]
Maximum ratings (T
A
= 25°C)
BC546
Collector-Emitter-voltage
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Characteristics (T
j
= 25°C)
Group A
DC current gain – Kollektor-Basis-Stromverhältnis
2
)
V
CE
= 5 V, I
C
= 10 µA
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 100 mA
h-Parameters at/bei V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung
Input impedance – Eingangs-Impedanz
Output admittance – Ausgangs-Leitwert
Reverser voltage transfer ratio
Spannungsrückwirkung
h
fe
h
ie
h
oe
h
re
typ. 220
1.6 ... 4.5 kΩ
18 < 30 µS
typ. 1.5*10
-4
h
FE
h
FE
h
FE
typ. 90
110 ... 220
typ. 120
E-B short
B open
E open
C open
V
CES
V
CEO
V
CBO
V
EB0
P
tot
I
C
I
CM
I
BM
- I
EM
T
j
T
S
85 V
65 V
80 V
Grenzwerte (T
A
= 25°C)
BC547
50 V
45 V
50 V
5V
500 mW
1
)
100 mA
200 mA
200 mA
200 mA
-55...+150°C
-55…+150°C
Kennwerte (T
j
= 25°C)
Group B
typ. 150
200 ... 450
typ. 200
Group C
typ. 270
420 ... 800
typ. 400
BC548/549
30 V
30 V
30 V
typ. 330
3.2 ...8.5 kΩ
30 < 60 µS
typ. 2*10
-4
typ. 600
6 ... 15 kΩ
60 < 110 µS
typ. 3*10
-4
1
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
http://www.diotec.com/
© Diotec Semiconductor AG
1
BC546xBK ... BC549xBK
Characteristics (T
j
= 25°C)
Min.
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
V
CE
= 80 V, (B-E short)
V
CE
= 50 V, (B-E short)
V
CE
= 30 V, (B-E short)
V
CE
= 80 V, T
j
= 125°C, (B-E short)
V
CE
= 50 V, T
j
= 125°C, (B-E short)
V
CE
= 30 V, T
j
= 125°C, (B-E short)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
Base saturation voltage – Basis-Sättigungsspannung
2
)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
Base-Emitter-voltage – Basis-Emitter-Spannung
2
)
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 10 mA
Gain-Bandwidth Product – Transitfrequenz
V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
CB
= 10 V, I
E
=i
e
= 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz
Noise figure – Rauschzahl
V
CE
= 5 V, I
C
= 200 µA, R
G
= 2 kΩ
f = 1 kHz, Δf = 200 Hz
BC546 / BC547
BC548 / BC549
F
F
R
thA
–
–
2 dB
1.2 dB
< 200 K/W
1
)
BC556 ... BC559
BC546A
BC547A
BC548A
BC546B
BC547B
BC548B
BC549B
BC547C
BC548C
BC549C
10 dB
4 dB
C
EB0
–
9 pF
–
C
CBO
–
3.5 pF
6 pF
f
T
–
300 MHz
–
V
BE
V
BE
580 mV
–
660 mV
–
700 mV
720 mV
V
BEsat
V
BEsat
–
–
700 mV
900 mV
–
–
BC546
BC547
BC548 / BC549
BC546
BC547
BC548 / BC549
I
CES
I
CES
I
CES
I
CES
I
CES
I
CES
V
CEsat
V
CEsat
–
–
–
–
–
–
–
–
0.2 nA
0.2 nA
0.2 nA
–
–
–
80 mV
200 mV
15 nA
15 nA
15 nA
4 µA
4 µA
4 µA
200 mV
600 mV
Kennwerte (T
j
= 25°C)
Typ.
Max.
Collector-Emitter saturation voltage – Kollektor-EmitterSättigungsspg.
2
)
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
2
1
Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
http://www.diotec.com/
© Diotec Semiconductor AG
2
51mcu
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