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K4N51163QE-GC2AT

Description
DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84
Categorystorage    storage   
File Size1MB,64 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K4N51163QE-GC2AT Overview

DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84

K4N51163QE-GC2AT Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid107305756
package instructionFBGA, BGA84,9X15,32
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time0.45 ns
Maximum clock frequency (fCLK)350 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PBGA-B84
memory density536870912 bit
Memory IC TypeGDDR2 DRAM
memory width16
Number of terminals84
word count33554432 words
character code32000000
Maximum operating temperature85 °C
Minimum operating temperature
organize32MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA84,9X15,32
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Continuous burst length4,8
Maximum standby current0.008 A
Maximum slew rate0.25 mA
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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