Pin Diode, 100V V(BR), Silicon, DO-35
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Dynex |
| package instruction | O-LALF-W2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| application | ATTENUATOR; SWITCHING |
| Minimum breakdown voltage | 100 V |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Maximum diode capacitance | 0.4 pF |
| Nominal diode capacitance | 0.4 pF |
| Diode component materials | SILICON |
| Maximum diode forward resistance | 3.5 Ω |
| Diode resistance test current | 100 mA |
| Diode resistance test frequency | 40 MHz |
| Diode type | PIN DIODE |
| frequency band | MEDIUM FREQUENCY |
| JEDEC-95 code | DO-35 |
| JESD-30 code | O-LALF-W2 |
| JESD-609 code | e0 |
| Minority carrier nominal lifetime | 2 µs |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -55 °C |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Maximum power dissipation | 0.25 W |
| Certification status | Not Qualified |
| Reverse test voltage | 50 V |
| surface mount | NO |
| technology | POSITIVE-INTRINSIC-NEGATIVE |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Base Number Matches | 1 |
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