DSEC 60-02AQ
FRED for PDP Applications
with common cathode and soft recovery
I
FAV
= 2x30 A
V
RRM
= 200 V
t
rr
= 25 ns
A
V
RSM
V
200
V
RRM
V
200
Type
A
C
TO-3 P
C (TAB)
DSEC 60-02AQ
A
C
A
A = Anode, C = Cathode
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
F
C
Weight
Conditions
T
C
= 145°C; rectangular, d = 0.5
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 3 A; L = 180 µH
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
70
30
325
1.2
ne
w
165
0.8...1.2
20...120
5.2
-55...+175
175
-55...+150
T
C
= 25°C
mounting torque
mounting force with clip
typical
Symbol
I
R
①
Conditions
fo
r
Characteristic Values
typ.
max.
3
200
0.95
1.20
0.9
0.25
25
4
µA
µA
V
V
K/W
K/W
ns
A
R
thJC
R
thCH
t
rr
I
RM
Pulse test:
①
Pulse Width = 5 ms, Duty Cycle < 2.0 %
②
Pulse Width = 300
µs,
Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified.
No
V
F
②
I
F
= 30 A;
I
F
= 1 A; -di/dt = 200 A/µs;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 50 A;
-di
F
/dt = 100 A/µs; T
VJ
= 100°C
t
V
R
= V
RRM
; T
VJ
= 25°C
V
R
= V
RRM
; T
VJ
= 150°C
T
VJ
= 150°C
T
VJ
= 25°C
de
s
mJ
A
0.3
°C
°C
°C
W
Nm
N
g
A
A
A
Recommended replacement:
DPG 60C200QB
20070605b
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
ig
Features
•
•
•
•
•
•
•
Advantages
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low EMI/RFI
• Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
n
1-2
DSEC 60-02AQ
60
A
I
F
40
T
VJ
=150°C
T
VJ
=100°C
T
VJ
= 25°C
20
Q
r
800
600
nC
600
450
T
VJ
= 100°C
V
R
= 100 V
I
RM
I
F
= 60 A
I
F
= 30 A
30
20
A
24
T
VJ
= 100°C
V
R
= 100 V
I
F
= 60 A
18
10
12
I
F
= 30 A
I
F
= 15 A
400
300
I
F
= 15 A
150
200
6
0
0.0
0.5
1.4
80
ns
ig
13
V
12
V
FR
11
10
9
8
7
0
200
t
fr
Fig. 1 Forward current I
F
vs. V
F
Fig. 2 Reverse recovery charge
Q
r
versus -di
F
/dt
T
VJ
= 100°C
V
R
= 100 V
Fig. 3 Peak reverse current
I
RM
versus -di
F
/dt
T
VJ
= 100°C
I
F
= 30 A
1.50
µs
1.25
t
fr
1.00
V
FR
0.75
0.50
0.25
0.00
600 A/µs 1000
800
di
F
/dt
1.2
K
f
1.0
I
RM
t
rr
70
60
0.8
Q
r
0.6
50
40
0.4
0
40
80
120 C 160
T
VJ
30
ne
w
r
0
200
400
600
-di
F
/dt
de
s
I
F
= 60A
I
F
= 30A
I
F
= 15A
800
A/µs 1000
400
1
K/W
0.1
Z
thJC
0.01
fo
Fig. 4 Dynamic parameters
Q
r
, I
RM
versus T
VJ
Fig. 5 Recovery time t
rr
vs. -di
F
/dt
Fig. 6 Peak forward voltage
V
FR
and t
fr
versus di
F
/dt
t
Constants for Z
thJC
calculation:
i
1
2
3
R
thi
(K/W)
0.465
0.179
0.256
t
i
(s)
0.005
0.0003
0.04
0.001
No
0.0001
0.00001
DSEC 60-02A
0.0001
0.001
0.01
0.1
t
s
1
NOTE: Fig. 2 to Fig. 6 shows typical values
Fig. 7 Transient thermal resistance junction to case
20070605b
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
n
1.0
V
F
V
1.5
0
100
0
A/µs 1000
-di
F
/dt
0
200
400
600 A/µs 1000
800
-di
F
/dt
2-2
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