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DE28F800F3B95

Description
Flash, 512KX16, 95ns, PDSO56, 16 X 23.70 MM, SSOP-56
Categorystorage    storage   
File Size324KB,48 Pages
ManufacturerIntel
Websitehttp://www.intel.com/
Download Datasheet Parametric Compare View All

DE28F800F3B95 Overview

Flash, 512KX16, 95ns, PDSO56, 16 X 23.70 MM, SSOP-56

DE28F800F3B95 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerIntel
Parts packaging codeSSOP
package instruction16 X 23.70 MM, SSOP-56
Contacts56
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time95 ns
Other featuresBOTTOM BOOT BLOCK
startup blockBOTTOM
command user interfaceYES
Data pollingNO
JESD-30 codeR-PDSO-G56
JESD-609 codee0
length23.7 mm
memory density8388608 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size8,15
Number of terminals56
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize512KX16
Package body materialPLASTIC/EPOXY
encapsulated codeSSOP
Encapsulate equivalent codeSOP56,.6,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, SHRINK PITCH
page size4 words
Parallel/SerialPARALLEL
power supply3.3 V
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.9 mm
Department size4K,32K
Maximum standby current0.0001 A
Maximum slew rate0.06 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
switch bitNO
typeNOR TYPE
width13.3 mm
Base Number Matches1
3 Volt Fast Boot Block Flash Memory
28F800F3—Automotive
Preliminary Datasheet
Product Features
s
s
High Performance
— Up to 50 MHz Effective Zero Wait-State
Performance
— Synchronous Burst-Mode Reads
— Asynchronous Page-Mode Reads
SmartVoltage Technology
— 3.0 V−3.6 V Read and Write Operations for
Low Power Designs
— 12 V V
PP
Fast Factory Programming
s
s
s
Enhanced Data Protection
— Absolute Write Protection with
V
PP
= GND
— Block Locking
— Block Erase/Program Lockout during Power
Transitions
Manufactured on ETOX™ V Flash Technology
s
s
s
s
s
Supports Code Plus Data Storage
— Optimized for Flash Data Integrator (FDI)
and other Intel
®
Software
— Fast Program Suspend Capability
— Fast Erase Suspend Capability
Flexible Blocking Architecture
— Eight 4-Kword Blocks for Data
— 32-Kword Main Blocks for Code
— Top or Bottom Boot Configurations
Extended Cycling Capability
Low Power Consumption
Automated Program and Block Erase
Algorithms
— Command User Interface for Automation
— Status Register for System Feedback
Industry-Standard Packaging
— 56-Lead SSOP
— Intel
®
Easy BGA
The Intel
®
3 Volt Fast Boot Block Flash memory offers the highest performance synchronous burst reads—
making it an ideal memory solution for burst CPUs. The Intel 3 Volt Fast Boot Block Flash memory also
supports asynchronous page mode operation for non-clocked memory subsystems. Combining high read
performance with the intrinsic nonvolatility of flash memory eliminates the traditional redundant memory
paradigm of shadowing code from a slower nonvolatile storage source to a faster execution memory device,
(e.g., SRAM SDRAM), for improved system performance. By adding 3 Volt Fast Boot Block Flash
memory to your system you could reduce the total memory requirement, which helps increase reliability
and reduce overall system power consumption—all while reducing system cost.
This family of products is manufactured on Intel
®
0.4
µm
ETOX™ V process technology. They are
available in a wide variety of industry-standard packaging technologies.
Notice:
This document contains preliminary information on new products in production. The
specifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
Order Number: 290686-003
March 2001

DE28F800F3B95 Related Products

DE28F800F3B95 RA28F800F3T95 RA28F800F3B80 RA28F800F3T80 RA28F800F3B95
Description Flash, 512KX16, 95ns, PDSO56, 16 X 23.70 MM, SSOP-56 Flash, 512KX16, 95ns, PBGA56, BGA-56 Flash, 512KX16, 80ns, PBGA56, BGA-56 Flash, 512KX16, 80ns, PBGA56, BGA-56 Flash, 512KX16, 95ns, PBGA56, BGA-56
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Maker Intel Intel Intel Intel Intel
Parts packaging code SSOP BGA BGA BGA BGA
package instruction 16 X 23.70 MM, SSOP-56 BGA-56 BGA-56 BGA-56 BGA-56
Contacts 56 56 56 56 56
Reach Compliance Code unknown unknown unknown unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Maximum access time 95 ns 95 ns 80 ns 80 ns 95 ns
Other features BOTTOM BOOT BLOCK MIN 100,000 BLOCK ERASE CYCLES; TOP BOOT BLOCK BOTTOM BOOT BLOCK TOP BOOT BLOCK MIN 100,000 BLOCK ERASE CYCLES; BOTTOM BOOT BLOCK
startup block BOTTOM TOP BOTTOM TOP BOTTOM
command user interface YES YES YES YES YES
Data polling NO NO NO NO NO
JESD-30 code R-PDSO-G56 R-PBGA-B56 R-PBGA-B56 R-PBGA-B56 R-PBGA-B56
JESD-609 code e0 e0 e0 e0 e0
memory density 8388608 bit 8388608 bit 8388608 bit 8388608 bi 8388608 bi
Memory IC Type FLASH FLASH FLASH FLASH FLASH
memory width 16 16 16 16 16
Number of functions 1 1 1 1 1
Number of departments/size 8,15 8,15 8,15 8,15 8,15
Number of terminals 56 56 56 56 56
word count 524288 words 524288 words 524288 words 524288 words 524288 words
character code 512000 512000 512000 512000 512000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C
organize 512KX16 512KX16 512KX16 512KX16 512KX16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code SSOP BGA BGA BGA BGA
Encapsulate equivalent code SOP56,.6,32 BGA64,8X8,32 BGA64,8X8,32 BGA64,8X8,32 BGA64,8X8,32
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, SHRINK PITCH GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY
page size 4 words 4 words 4 words 4 words 4 words
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
power supply 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
Programming voltage 3 V 3 V 3 V 3 V 3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Department size 4K,32K 4K,32K 4K,32K 4K,32K 4K,32K
Maximum standby current 0.0001 A 0.0001 A 0.0001 A 0.0001 A 0.0001 A
Maximum slew rate 0.06 mA 0.06 mA 0.06 mA 0.06 mA 0.06 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS
Temperature level AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING BALL BALL BALL BALL
Terminal pitch 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
Terminal location DUAL BOTTOM BOTTOM BOTTOM BOTTOM
switch bit NO NO NO NO NO
type NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE
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