4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
January 2009
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M,
H11A1M, H11A2M, H11A3M, H11A4M, H11A5M
General Purpose 6-Pin Phototransistor Optocouplers
Features
■
UL recognized (File # E90700, Volume 2)
■
VDE recognized (File # 102497)
Description
The general purpose optocouplers consist of a gallium
arsenide infrared emitting diode driving a silicon pho-
totransistor in a 6-pin dual in-line package.
– Add option V (e.g., 4N25VM)
Applications
■
Power supply regulators
■
Digital logic inputs
■
Microprocessor inputs
Schematic
1
6
Package Outlines
2
5
3
NC
4
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
www.fairchildsemi.com
4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE
T
STG
T
OPR
T
SOL
P
D
EMITTER
I
F
V
R
I
F
(pk)
P
D
DETECTOR
V
CEO
V
CBO
V
ECO
P
D
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Storage Temperature
Operating Temperature
Parameter
Value
-40 to +150
-40 to +100
260 for 10 sec
250
2.94
60
6
3
120
1.41
30
70
7
150
1.76
Units
°C
°C
°C
mW
Wave solder temperature (see page 8 for reflow solder profile)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
DC/Average Forward Input Current
Reverse Input Voltage
Forward Current – Peak (300µs, 2% Duty Cycle)
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
mA
V
A
mW
mW/°C
V
V
V
mW
mW/°C
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
Electrical Characteristics
(T
A
= 25°C unless otherwise specified)
Individual Component Characteristics
Symbol
EMITTER
V
F
I
R
DETECTOR
BV
CEO
BV
CBO
BV
ECO
I
CEO
I
CBO
C
CE
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Collector-Base Dark Current
Capacitance
I
C
= 1.0mA, I
F
= 0
I
C
= 100µA, I
F
= 0
I
E
= 100µA, I
F
= 0
V
CE
= 10V, I
F
= 0
V
CB
= 10V
V
CE
= 0V, f = 1 MHz
8
30
70
7
100
120
10
1
50
20
V
V
V
nA
nA
pF
Input Forward Voltage
Reverse Leakage Current
I
F
= 10mA
V
R
= 6.0V
1.18
0.001
1.50
10
V
µA
Parameter
Test Conditions
Min.
Typ.*
Max.
Unit
Isolation Characteristics
Symbol
V
ISO
R
ISO
C
ISO
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Test Conditions
f = 60Hz, t = 1 sec
V
I-O
= 500 VDC
V
I-O
= &, f = 1MHz
Min.
7500
10
11
Typ.* Max.
Units
Vac(pk)
Ω
0.2
2
pF
*Typical values at T
A
= 25°C
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
www.fairchildsemi.com
2
4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Electrical Characteristics
(Continued)
(T
A
= 25°C unless otherwise specified)
Transfer Characteristics
Symbol
CTR
Parameter
Current Transfer Ratio,
Collector to Emitter
Test Conditions
I
F
= 10mA, V
CE
= 10V
Device
4N35M, 4N36M,
4N37M
H11A1M
H11A5M
4N25M, 4N26M
H11A2M, H11A3M
4N27M, 4N28M
H11A4M
Min. Typ.* Max.
100
50
30
20
10
40
40
0.5
0.3
0.4
Unit
%
DC CHARACTERISTICS
I
F
= 10mA, V
CE
= 10V,
T
A
= -55°C
I
F
= 10mA, V
CE
= 10V,
T
A
= +100°C
V
CE (SAT)
Collector-Emitter
Saturation Voltage
I
C
= 2mA, I
F
= 50mA
I
C
= 0.5mA, I
F
= 10mA
4N35M, 4N36M,
4N37M
4N35M, 4N36M,
4N37M
4N25M, 4N26M,
4N27M, 4N28M,
4N35M, 4N36M,
4N37M
H11A1M, H11A2M,
H11A3M, H11A4M,
H11A5M
V
AC CHARACTERISTICS
T
ON
Non-Saturated
Turn-on Time
I
F
= 10mA, V
CC
= 10V,
R
L
= 100
Ω
(Fig. 11)
4N25M, 4N26M,
4N27M, 4N28M,
H11A1M, H11A2M,
H11A3M, H11A4,
H11A5M
4N35M, 4N36M,
4N37M
4N25M, 4N26M,
4N27M, 4N28M,
H11A1M, H11A2M,
H11A3M, H11A4M,
H11A5M
4N35M, 4N36M,
4N37M
2
µs
I
C
= 2mA, V
CC
= 10V,
R
L
= 100
Ω
(Fig. 11)
T
OFF
Turn-off Time
I
F
= 10mA, V
CC
= 10V,
R
L
= 100
Ω
(Fig. 11)
2
2
10
µs
µs
I
C
= 2mA, V
CC
= 10V,
R
L
= 100
Ω
(Fig. 11)
* Typical values at T
A
= 25°C
2
10
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
www.fairchildsemi.com
3
4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Typical Performance Curves
Fig. 1 LED Forward Voltage vs. Forward Current
1.8
1.6
V
CE
= 5.0V
T
A
= 25°C
Normalized to
I
F
= 10 mA
Fig. 2 Normalized CTR vs. Forward Current
1.7
1.4
V
F
- FORWARD VOLTAGE (V)
1.6
1.2
1.5
NORMALIZED CTR
100
1.0
1.4
T
A
= -55°C
0.8
1.3
T
A
= 25°C
1.2
T
A
= 100°C
1.1
0.6
0.4
0.2
1.0
1
10
0.0
0
2
4
6
8
10
12
14
16
18
20
I
F
- LED FORWARD CURRENT (mA)
I
F
- FORWARD CURRENT (mA)
Fig. 3 Normalized CTR vs. Ambient Temperature
1.4
1.0
Fig. 4 CTR vs. RBE (Unsaturated)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
0.9
I
F
= 20 mA
0.8
0.7
0.6
0.5
0.4
0.3
0.2
V
CE
= 5.0 V
0.1
0.0
I
F
= 10 mA
I
F
= 5 mA
1.2
I
F
= 5 mA
NORMALIZED CTR
1.0
I
F
= 10 mA
0.8
0.6
I
F
= 20 mA
0.4
Normalized to
I
F
= 10 mA
T
A
= 25°C
-40
-20
0
20
40
60
80
100
0.2
-60
10
100
1000
T
A
- AMBIENT TEMPERATURE (°C)
R
BE
- BASE RESISTANCE (kΩ)
Fig. 5 CTR vs. RBE (Saturated)
1.0
Fig. 6 Collector-Emitter Saturation Voltage
vs. Collector Current
100
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
0.9
V
CE
= 0.3 V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
I
F
= 5 mA
I
F
= 10 mA
V
CE (SAT)
- COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
T
A
= 25˚C
10
I
F
= 20 mA
1
I
F
= 10 mA
I
F
= 2.5 mA
0.1
I
F
= 5 mA
0.01
I
F
= 20 mA
0.0
10
100
1000
0.001
0.01
0.1
1
10
R
BE
- BASE RESISTANCE (k
Ω)
I
C
- COLLECTOR CURRENT (mA)
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
www.fairchildsemi.com
4
4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Typical Performance Curves
(Continued)
Fig. 7 Switching Speed vs. Load Resistor
1000
I
F
= 10 mA
V
CC
= 10 V
T
A
= 25°C
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
100
1000
10000
100000
V
CC =
10 V
I
C
= 2 mA
R
L
= 100
Ω
Fig. 8 Normalized t
on
vs. R
BE
10
T
off
T
f
T
on
1
T
r
0.1
0.1
1
10
100
R-LOAD RESISTOR (kΩ)
NORMALIZED t
on
- (t
on(R
BE
)
/ t
on(open)
)
SWITCHING SPEED - (µs)
R
BE
- BASE RESISTANCE (k
Ω)
Fig. 9 Normalized t
off
vs. R
BE
1.4
1.3
Fig. 10 Dark Current vs. Ambient Temperature
I
CEO
- COLLECTOR -EMITTER DARK CURRENT (nA)
10000
V
CE
= 10 V
T
A
= 25°C
NORMALIZED t
off
- (t
off(R
BE
)
/ t
off(open)
)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
100
1000
10000
100000
V
CC =
10 V
I
C
= 2 mA
R
L
= 100
Ω
1000
100
10
1
0.1
0.01
0.001
0
20
40
60
80
100
R
BE
- BASE RESISTANCE (k
Ω)
T
A
- AMBIENT TEMPERATURE (°C)
TEST CIRCUIT
V
CC
= 10V
WAVE FORMS
INPUT PULSE
I
F
INPUT
R
BE
I
C
R
L
10%
90%
t
r
t
on
Adjust I
F
to produce I
C
= 2 mA
t
f
t
off
OUTPUT PULSE
OUTPUT
Figure 11. Switching Time Test Circuit and Waveforms
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
www.fairchildsemi.com
5
京公网安备 11010802033920号
EEWORLD
