2N3506
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N3506J)
•
JANTX level (2N3506JX)
•
JANTXV level (2N3506JV)
•
JANS level (2N3506JS)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
•
Radiation testing (total dose) upon request
Applications
•
General purpose switching transistor
•
Low power
•
NPN silicon transistor
Features
•
•
•
•
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 1506
Reference document:
MIL-PRF-19500/349
Benefits
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
•
Qualification Levels: JAN, JANTX,
JANTXV and JANS
•
Radiation testing available
T
C
= 25°C unless otherwise specified
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25
O
C
Derate linearly above 25
O
C
Power Dissipation, T
C
= 25
O
C
Derate linearly above 25
O
C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
Rating
40
60
5
3
1
5.71
5
28.6
175
-65 to +200
-65 to +200
Unit
Volts
Volts
Volts
A
W
mW/°C
W
mW/°C
°C/W
°C
°C
R
θJA
T
J
T
STG
Copyright 20
10
Rev. E
Semicoa
Corporation
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3506
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
V
BEsat1
V
BEsat2
V
BEsat3
V
CEsat1
V
CEsat2
V
CEsat3
Symbol
|h
FE
|
C
OBO
C
IBO
t
d
t
r
t
s
t
f
Test Conditions
I
C
= 500 mA, V
CE
= 1 Volts
I
C
= 1.5 A, V
CE
= 2 Volts
I
C
= 2.5 A, V
CE
= 3 Volts
I
C
= 3.0 A, V
CE
= 5 Volts
I
C
= 500 mA, V
CE
= 1 Volts
T
A
= -55°C
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1.5 A, I
B
= 150 mA
I
C
= 2.5 A, I
B
= 250 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1.5 A, I
B
= 150 mA
I
C
= 2.5 A, I
B
= 250 mA
Test Conditions
V
CE
= 5 Volts, I
C
= 100 mA,
f = 20 MHz
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
V
EB
= 3 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
I
C
= 1.5 A, I
B1
= 150 mA
I
C
= 1.5 A, I
B1
= 150 mA
I
C
= 1.5 A, I
B1
=I
B2
= 150 mA
I
C
= 1.5 A, I
B1
=I
B2
= 150 mA
Min
50
40
30
25
25
Typ
Max
250
200
Units
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX1
I
CEX2
Test Conditions
I
C
= 100
µA
I
C
= 10 mA
I
E
= 10
µA
V
CE
= 40 Volts, V
EB
= 4 Volts
V
CE
= 40 Volts, V
EB
= 4 Volts,
T
A
= 150°C
Min
60
40
5
1
1.5
Typ
Max
Units
Volts
Volts
Volts
µA
mA
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Delay Time
Rise Time
Switching Characteristics
Storage Time
Fall Time
0.8
0.5
1.0
1.5
1.0
1.3
2.0
Volts
Volts
Min
3
Typ
Max
15
40
300
15
30
Units
pF
pF
ns
ns
55
35
ns
ns
Copyright 20
10
Rev. E
Semicoa
Corporation
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
京公网安备 11010802033920号
EEWORLD
