38MPA0547 datasheet, PDF - EEWORLD Datasheet

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38MPA0547: DescriptionWide Band Medium Power Amplifier, 35000MHz Min, 45000MHz Max, DIE-11; CategoryWireless rf/communication Radio frequency and microwave; File Size2MB，6 Pages; ManufacturerMimix Broadband （MACOM）; Websitehttp://www.macom.com; Environmental Compliance

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38MPA0547 Overview

Wide Band Medium Power Amplifier, 35000MHz Min, 45000MHz Max, DIE-11

38MPA0547 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Mimix Broadband （MACOM）
Reach Compliance Code	unknown
structure	COMPONENT
Gain	23 dB
JESD-609 code	e3
Maximum operating frequency	45000 MHz
Minimum operating frequency	35000 MHz
RF/Microwave Device Types	WIDE BAND MEDIUM POWER
Terminal surface	Matte Tin (Sn)
Base Number Matches	1

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35.0-45.0 GHz GaAs MMIC

Power Amplifier

August 2005 - Rev 04-Aug-05

38MPA0547

Chip Device Layout

Features

Excellent Transmit Output Stage

Output Power Adjust

23.0 dB Small Signal Gain

+25.0 dBm P1dB Compression Point

100% On-Wafer RF, DC and Output Power Testing

100% Visual Inspection to MIL-STD-883

Method 2010

General Description

Mimix Broadband’s four stage 35.0-45.0 GHz GaAs

MMIC power amplifier has a small signal gain of 23.0

dB with a +25.0 dBm P1dB output compression point.

This MMIC uses Mimix Broadband’s 0.15

µm

GaAs

PHEMT device model technology, and is based upon

electron beam lithography to ensure high

repeatability and uniformity. The chip has surface

passivation to protect and provide a rugged part with

backside via holes and gold metallization to allow

either a conductive epoxy or eutectic solder die

attach process. This device is well suited for

Millimeter-wave Point-to-Point Radio, LMDS, SATCOM

and VSAT applications.

Electrical Characteristics (Ambient Temperature T = 25

Parameter

Frequency Range (f )

Input Return Loss (S11)

Output Return Loss (S22)

Small Signal Gain (S21)

Gain Flatness (ΔS21)

Reverse Isolation (S12)

Output Power for 1dB Compression (P1dB)

Drain Bias Voltage (Vd1,2,3,4)

Gate Bias Voltage (Vg1,2,3,4)

Supply Current (Id1) (Vd=5.0V, Vg=-0.7V Typical)

Supply Current (Id2) (Vd=5.0V, Vg=-0.7V Typical)

Supply Current (Id3) (Vd=5.0V, Vg=-0.7V Typical)

Supply Current (Id4) (Vd=5.0V, Vg=-0.7V Typical)

(2) Measured using constant current.

Supply Voltage (Vd)

Supply Current (Id1,2,3,4)

Gate Bias Voltage (Vg)

Input Power (Pin)

Storage Temperature (Tstg)

Operating Temperature (Ta)

Channel Temperature (Tch)

Min.

35.0

-1.0

Absolute Maximum Ratings

+6.0 VDC

45,80,165,325 mA

+0.3 VDC

TBD

-65 to +165

-55 to MTTF Table

MTTF Table

(1) Channel temperature affects a device's MTTF. It is

recommended to keep channel temperature as low as

possible for maximum life.

Units

GHz

dBm

VDC

Typ.

10.0

8.0

23.0

+/-1.0

45.0

+25.0

+5.0

-0.7

125

245

tio

Max.

45.0

+5.5

0.0

150

295

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Page 1 of 6

Characteristic Data and Specifications are subject to change without notice.

Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

35.0-45.0 GHz GaAs MMIC

Power Amplifier

August 2005 - Rev 04-Aug-05

App Note [1] Biasing

It is recommended to separately bias each amplifier stage Vd1 through Vd4 at Vd(1,2,3,4)=5.0V with Id1=35mA, Id2=60mA,

38MPA0547

App Note [2] Bias Arrangement

For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd1,2,3,4 and Vg1,2,3,4) needs to have DC bypass capacitance

(~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.

lowering the individual or combined gate voltages towards pinch off without sacrificing much in the way of Input/Output 3rd Order Intercept Point.

Improvements to the IIP3/OIP3 data shown here while attenuating the gain are also possible with individual gate control. Data here has been taken

using combined gate control (all gates changed together) to lower the device's output power. The results are shown below. Additionally, the

accompanying graphs show the level and linearity of the typical attenuation achievable as the gate is adjusted at various levels until pinch-off.

Turn-off 38MPA0547: Pin=+5 dBm, linear decrease from 5V/500 mA to 0V/0 mA (Vgs=-1.6 V)

Output Power (dBm)

37.5

-5

-10

-15

-20

-25

-30

38.5

Frequency (GHz)

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

39.5

App Note [3] Output Power Adjust Using Gate Control -

This device has a very useful additional feature. The output power can be adjusted by

tio

For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass

capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or

drains are tied together) of DC bias pads.

Page 4 of 6

Characteristic Data and Specifications are subject to change without notice.

Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

Id3=125mA and Id4=245mA. Separate biasing is recommended if the amplifier is to be used at high levels of saturation, where gate rectification will

alter the effective gate control voltage. For non-critical applications it is possible to parallel all stages and adjust the common gate voltage for a

total drain current Id(total)=465 mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature

vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may

be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The

gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.7V.

Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative

gate bias is available before applying the positive drain supply.

38MPA0547 Related Products

	38MPA0547
Description	Wide Band Medium Power Amplifier, 35000MHz Min, 45000MHz Max, DIE-11
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Mimix Broadband （MACOM）
Reach Compliance Code	unknown
structure	COMPONENT
Gain	23 dB
JESD-609 code	e3
Maximum operating frequency	45000 MHz
Minimum operating frequency	35000 MHz
RF/Microwave Device Types	WIDE BAND MEDIUM POWER
Terminal surface	Matte Tin (Sn)
Base Number Matches	1

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